HAT1021R Renesas Electronics Corporation., HAT1021R Datasheet
HAT1021R
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HAT1021R Summary of contents
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... HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) Rev.6.00 Sep 07, 2005 page ...
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... HAT1021R Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. When using the glass epoxy board (FR4 40 Electrical Characteristics ...
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... HAT1021R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics –10 V –8 V –6 V –50 –5 V –4.5 V –40 –30 –20 – –2 –4 Drain to Source Voltage Drain to Source Saturation Voltage vs ...
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... HAT1021R Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 0. –2 0.08 0.04 –1 A, –2 A, –5 A – – Case Temperature Body-Drain Diode Reverse Recovery Time 500 200 100 µ –0.1 –0.2 –0.5 –1 Reverse Drain Current ...
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... HAT1021R 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω –4 V Rev.6.00 Sep 07, 2005 page Reverse Drain Current vs. Source to Drain Voltage –50 Pulse Test –40 – –30 –20 – –0.4 –0.8 – ...
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... Ordering Information Part Name HAT1021R-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Sep 07, 2005 page Package Name MASS[Typ.] FP-8DAV 0.085g ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...