HAT1021R Renesas Electronics Corporation., HAT1021R Datasheet - Page 4

• Manufacturer Part Number: HAT1021R
• Description: Silicon P Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT1021R
Rev.6.00 Sep 07, 2005 page 4 of 6
0.20
0.16
0.12
0.08
0.04
–10
–20
–30
–40
–50
500
200
100
Static Drain to Source on State Resistance
50
20
10
–40
–0.1 –0.2
0
0
5
0
Reverse Drain Current
I
Pulse Test
D
V
V
Case Temperature
Dynamic Input Characteristics
DS
GS
= –5.5 A
Body-Drain Diode Reverse
Gate Charge
= –2.5 V
0
V
8
–4 V
DD
vs. Temperature
Recovery Time
–0.5
= –20 V
V
–10 V
DD
16
40
–5 V
= –5 V
–10 V
–20 V
–1
I
–1 A, –2 A, –5 A
di / dt = 20 A / µs
V
D
GS
V
= –5 A
80
GS
24
= 0, Ta = 25°C
Qg (nc)
–2
Tc (°C)
–1 A, –2 A
I
120
DR
32
–5
(A)
–10
160
40
–10
–2
–4
–6
–8
0
10000
3000
1000
300
100
500
200
100
0.5
30
10
50
20
10
50
20
10
–0.2
–0.1
5
2
1
5
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
V
PW = 3 µs, duty ≤ 1 %
GS
–0.2
–0.5
Switching Characteristics
= –4 V, V
Drain to Source Voltage
Typical Capacitance vs.
–4
Drain Current
Drain Current I
t r
–0.5
Drain Current
–1
25°C
–8
DD
Tc = –25°C
t d(off)
= –10 V
–2
–1
–12
t d(on)
t f
75°C
–2
I
D
V
Pulse Test
D
–5
DS
V
f = 1 MHz
GS
(A)
(A)
–16
= –10 V
DS
= 0
–10 –20
Coss
–5
Crss
Ciss
(V)
–20
–10