HAT1021R Renesas Electronics Corporation., HAT1021R Datasheet - Page 3

• Manufacturer Part Number: HAT1021R
• Description: Silicon P Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT1021R
Main Characteristics
Rev.6.00 Sep 07, 2005 page 3 of 6
–0.5
–0.4
–0.3
–0.2
–0.1
–50
–40
–30
–20
–10
4.0
3.0
2.0
1.0
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
–10 V –8 V
Power vs. Temperature Derating
Test Condition:
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
–2
–2
Gate to Source Voltage
50
–4
–6 V
–4
–5 V
100
–4.5 V
–6
–6
V
Pulse Test
GS
Pulse Test
150
Ta (°C)
V
V
I
= –1.5 V
–8
–8
D
GS
DS
–3.5 V
–2.5 V
–2 A
= –5 A
–1 A
–4 V
–3 V
–2 V
(V)
(V)
200
–10
–10
–0.03 Ta = 25°C
–0.01
–100
–0.3
–0.1
0.05
0.02
0.01
–30
–10
–50
–40
–30
–20
–10
Static Drain to Source on State Resistance
0.5
0.2
0.1
–3
–1
–0.2
–0.1
0
1
0
Gate to Source Voltage
1 shot pulse
Drain to Source Voltage V
Note 4:
Typical Transfer Characteristics
Maximum Safe Operation Area
Pulse Test
Operation in
this area is
limited by R
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
–0.3
–0.5
–1
Drain Current
vs. Drain Current
–1
Tc = –25°C
–1
–2
DS (on)
V
25°C
GS
10 µs
–3
–2
= –2.5 V
–3
–4 V
–10
I
V
Pulse Test
D
–5
DS
75°C
V
(A)
= –10 V
–4
–30
GS
DS
100 µs
–10
(V)
(V)
–100
–20
–5