ZVP4525Z Zetex Semiconductors plc., ZVP4525Z Datasheet

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ZVP4525Z

Manufacturer Part Number
ZVP4525Z
Description
250v P-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Part Number:
ZVP4525ZTA
Quantity:
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250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage switching circuits.
SOT223 and SOT23-6 versions are also available.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 2 - JUNE 2007
DEVICE
ZVP4525ZTA
ZVP4525ZTC
(BR)DSS
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary N-channel Type ZVN4525Z
SOT89 package
Earth Recall and dialling switches
Electronic hook switches
High Voltage Power MOSFET Drivers
Telecom call routers
Solid state relays
P52
=-250V; R
DS(ON)
REEL SIZE
(inches)
7
13
=14 ; I
D
=-205mA
TAPE WIDTH (mm)
12mm embossed
12mm embossed
1
QUANTITY
PER REEL
1000 units
4000 units
D
S E M I C O N D U C T O R S
ZVP4525Z
Top View
SOT89
S
D
G

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ZVP4525Z Summary of contents

Page 1

... Solid state relays ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH (mm) (inches) ZVP4525ZTA 7 12mm embossed ZVP4525ZTC 13 12mm embossed DEVICE MARKING • P52 ISSUE 2 - JUNE 2007 ZVP4525Z D Top View QUANTITY PER REEL 1000 units 4000 units SOT89 ...

Page 2

... ZVP4525Z ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS =10V; TA=25°C)( =10V; TA=70°C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation =25°C (a) Linear Derating Factor Operating and Storage Temperature Range ...

Page 3

... Single Pulse D=0.05 0 100 1k 100µ 1m Pulse Power Dissipation 3 ZVP4525Z 100 120 140 160 Temperature (°C) Derating Curve Single Pulse T =25°C amb 10m 100m 1 10 100 1k Pulse Width ( ...

Page 4

... ZVP4525Z ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... T = 150°C 1.0 0 10V DS 0 -50 Tj Junction Temperature (°C) Normalised Curves v Temperature 3. 150°C 4V 0.1 5V 10V 0. 25°C 0 Source-Drain Diode Forward Voltage ZVP4525Z 10V 3. Drain-Source Voltage ( 10V 200mA D R DS(on) V GS(th 1mA ...

Page 6

... ZVP4525Z 175 C 150 125 100 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage CHARACTERISTICS 200mA GS D ISS f = 1MHz C 8 OSS C RSS 0.0 Gate-Source Voltage v Gate Charge V = 25V DS 0.5 1.0 1.5 2.0 2 Charge (nC) ...

Page 7

... ISSUE 2 - JUNE 2007 TEST CIRCUITS ZVP4525Z ...

Page 8

... ZVP4525Z Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements ...

Page 9

... C F Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 53 ZVP4525Z 2.4 4.0 1.5 1.2 1.0 1.2 3.2 SOT89 pattern. Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL ...

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