AO3435 Alpha & Omega Semiconductor, AO3435 Datasheet
AO3435
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AO3435 Summary of contents
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... AO3435 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3435/L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 1.5V. This device is suitable for use in buck convertor applications. AO3435 and AO3435L are electrically identical. -RoHS Compliant ...
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... AO3435 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO3435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -3.0V -4. (Volts) DS Figure 1: On-Region Characteristics 150 V =-1.5V GS 130 V =-1.8V 110 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 180 160 140 120 100 125° 25° ...
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... AO3435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-10V DS I =-3. (nC) g Figure 7: Gate-Charge Characteristics 100.00 R DS(ON) 10.00 limited 1.00 0.10 T =150°C J(Max) T =25°C A 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θJA ...