AO3435 Alpha & Omega Semiconductor, AO3435 Datasheet - Page 2

• Manufacturer Part Number: AO3435
• Description: P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Alpha & Omega Semiconductor

AO3435
Alpha & Omega Semiconductor, Ltd.
A: The value of R
in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev0 : April 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
t
t
t
t
t
Q
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
θJA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
θJA
is measured with the device mounted on 1 in
Parameter
J
=25°C unless otherwise noted)
2
FR-4 board with 2oz. Copper, in a still air environment with T
Conditions
I
V
V
V
V
V
V
V
V
V
I
V
V
V
V
R
I
D
S
F
F
2
DS
DS
DS
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
=-3.5A, dI/dt=100A/µs
=-3.5A, dI/dt=100A/µs
=-250µA, V
=-1A,V
GEN
FR-4 board with 2oz. copper, in a still air environment with T
=-20V, V
=0V, V
=V
=-4.5V, V
=-4.5V, I
=-2.5V, I
=-1.8V, I
=-1.5V, I
=-5V, I
=0V, V
=0V, V
=-4.5V, V
=-4.5V, V
=6Ω
θJL
GS
and lead to ambient.
GS
I
D
D
GS
DS
DS
=0V
=-250µA
=-3.5A
D
D
D
D
GS
=±8V
=-10V, f=1MHz
=0V, f=1MHz
GS
DS
DS
DS
=-3.5A
=-3.0A
=-2.0A
=-0.5A
=0V
=0V
=-5V
=-10V, I
=-10V, R
T
D
L
T
=-3.5A
J
=3Ω,
=125°C
J
=55°C
12
Min
-0.5
-20
-25
-0.65
Typ
-0.7
100
560
8.5
1.2
2.1
7.2
56
80
70
85
15
80
70
15
36
53
56
37
27
A
=25°C. The SOA
A
=25°C. The value
±100
Max
100
110
130
-1.4
745
70
90
23
11
49
-1
-5
-1
-1
Units
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A