MAT01 Analog Devices, Inc., MAT01 Datasheet

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MAT01

Manufacturer Part Number
MAT01
Description
Matched Monolithic Dual Transistor
Manufacturer
Analog Devices, Inc.
Datasheet

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a
Matched Monolithic
Dual Transistor
MAT01
PIN CONNECTION
TO-78
(H Suffix)
PRODUCT DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
NOTE: Substrate is connected to case.
Matching characteristics include offset voltage of 40 µV, tem-
perature drift of 0.15 µV/°C, and h
matching of 0.7%. Very
FE
high h
is provided over a six decade range of collector current,
FE
BURN-IN CIRCUIT
including an exceptional h
of 590 at a collector current of only
FE
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.

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MAT01 Summary of contents

Page 1

... FE including an exceptional h of 590 at a collector current of only FE 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages. matching of 0.7%. Very Matched Monolithic Dual Transistor MAT01 PIN CONNECTION ...

Page 2

... C, unless otherwise noted.) A MAT01GH Typ Max Min Typ Min 0.06 0.15 0.14 0.70 0.15 0.50 0.35 1.8 0.9 8.0 1.5 15 150 130 400 77 300 200 50 300 90 400 30 200 50 400 Unit V mV µV/Mo µV/ µV p-p µV rms nV/√ ...

Page 3

... First Month (Note 1) OS Long-Term (Note 2) ) leakage currents may be CES . CBO ) T = 298 ° K for 25° +25 C, unless otherwise noted MAT01N Typical 0. 450 2.0 0.2 MAT01 Unit µV/°C pA/° MHz µV/Mo µV/Mo ...

Page 4

... ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage (BV ) CBO MAT01AH Collector-Emitter Voltage (BV ) CEO MAT01AH Collector-Collector Voltage ( MAT01AH Emitter-Emitter Voltage ( MAT01AH Emitter-Base Voltage ( EBO Collector Current ( . Emitter Current ( Total Power Dissipation Case Temperature ≤ 40° 1.8 W Ambient Temperature ≤ ...

Page 5

... Typical Performance Characteristics–MAT01 ...

Page 6

... MAT01 MAT01 TEST CIRCUITS ...

Page 7

... Stray thermoelectric voltages generated by dissimilar metals at the contacts to the input terminals can prevent realization of the predicted drift performance. Both input terminals should be maintained at the same temperature, preferably close to the temperature of the device’s package. TYPICAL APPLICATIONS Typical Performance Characteristics–MAT01 and FE ° ° ...

Page 8

... MAT01 0.040 (1.02) MAX Revision History Location Data Sheet changed from REV REV. B. Edits to FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Deleted WAFER TEST LIMITS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Deleted DICE CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Edits to Table OUTLINE DIMENSIONS Dimensions shown in inches and (mm). H-06A 6-Lead Metal Can (TO-78) REFERENCE PLANE 0.750 (19.05) 0.500 (12.70) 0.185 (4.70) 0.250 (6.35) MIN ...

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