BCY59 Central Semiconductor Corp., BCY59 Datasheet - Page 2

• Manufacturer Part Number: BCY59
• Description: Npn Silicon Transistor
• Manufacturer: Central Semiconductor Corp.

ELECTRICAL CHARACTERISTICS Continued
SYMBOL
f T
C ob
C ib
NF
t on
t d
t r
t off
t s
t f
t on
t d
t r
t off
t s
t f
BCY58/BCY59
TEST CONDITIONS
V CE =5.0V, I C =10mA, f=100MHz
V CB =10V, I E =0, f=1.0MHz
V EB =0.5V, I C =0, f=1.0MHz
V CE =5.0V, I C =200µA, R S =2k , f=1.0kHz, B=200Hz
V CC =10V, I C =10mA, I B1 =-I B2 =1.0mA
V CC =10V, I C =10mA, I B1 =-I B2 =1.0mA
V CC =10V, I C =10mA, I B1 =-I B2 =1.0mA
V CC =10V, I C =10mA, I B1 =-I B2 =1.0mA
V CC =10V, I C =10mA, I B1 =-I B2 =1.0mA
V CC =10V, I C =10mA, I B1 =-I B2 =1.0mA
V CC =10V, I C =100mA, I B1 =-I B2 =10mA
V CC =10V, I C =100mA, I B1 =-I B2 =10mA
V CC =10V, I C =100mA, I B1 =-I B2 =10mA
V CC =10V, I C =100mA, I B1 =-I B2 =10mA
V CC =10V, I C =100mA, I B1 =-I B2 =10mA
V CC =10V, I C =100mA, I B1 =-I B2 =10mA
LEAD #2
LEAD #1
45°
I
C
F
TO-18 PACKAGE - MECHANICAL OUTLINE
A
B
H
G
J
LEAD #3
D
E
R1
SYMBOL
G (DIA)
A (DIA)
B (DIA)
F (DIA)
C
D
H
E
J
I
0.209
0.178
0.170
0.500
0.016
0.036
0.028
MIN
-
DIMENSIONS
INCHES
0.100
0.050
0.230
0.195
0.030
0.210
0.019
0.046
0.048
MAX
MIN
150
-
TO-18 (REV: R1)
MILLIMETERS
12.70
5.31
4.52
4.32
0.41
0.91
0.71
MIN
-
TYP
85
35
50
450
400
80
55
5.0
50
450
250
200
NPN SILICON TRANSISTOR
2.54
1.27
MAX
5.84
4.95
0.76
5.33
0.48
1.17
1.22
-
MAX
150
800
150
800
5.0
15
10
UNITS
MHz
pF
pF
dB
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns