NP109N04PUG Renesas Electronics Corporation., NP109N04PUG Datasheet

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NP109N04PUG

Manufacturer Part Number
NP109N04PUG
Description
Mos Field Effect Transistor Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NP109N04PUG
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Document No. D18590EJ2V0DS00 (2nd edition)
Date Published December 2007 NS
Printed in Japan
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode).
• Super low on-state resistance
• High current rating I
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1. PW ≤ 10
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
DESCRIPTION
FEATURES
The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R
NP109N04PUG-E1-AY
NP109N04PUG-E2-AY
DS(on)
2. T
PART NUMBER
= 2.3 mΩ MAX. (V
ch
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
≤ 150°C, V
μ
s, Duty Cycle ≤ 1%
Note1
C
D(DC)
= 25°C)
Note
Note
DD
DS
C
A
GS
GS
= 20 V, R
= ±110 A
= 25°C)
= 25°C)
= 0 V)
Note2
= 0 V)
= 10 V, I
Note2
LEAD PLATING
Pure Sn (Tin)
N-CHANNEL POWER MOS FET
G
D
The mark <R> shows major revised points.
= 25 Ω, V
= 55 A)
A
V
V
I
I
P
P
T
T
I
E
D(DC)
D(pulse)
AR
R
R
DSS
GSS
T1
T2
ch
stg
AR
= 25°C)
DATA SHEET
th(ch-C)
th(ch-A)
GS
SWITCHING
= 20 → 0 V
−55 to +175
MOS FIELD EFFECT TRANSISTOR
Tape 800 p/reel
±110
±440
0.68
83.3
±20
220
175
360
1.8
40
60
PACKING
NP109N04PUG
°C/W
°C/W
mJ
°C
°C
W
W
V
V
A
A
A
TO-263 (MP-25ZP) typ. 1.5 g
PACKAGE
(TO-263)
2007

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NP109N04PUG Summary of contents

Page 1

... DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER Note NP109N04PUG-E1-AY Note NP109N04PUG-E2-AY Note Pb-free (This product does not contain Pb in external electrode). FEATURES • Super low on-state resistance R = 2.3 mΩ MAX. (V ...

Page 2

... TEST CIRCUIT 2 SWITCHING TIME D.U. PG DSS 0 V τ DS τ μ ≤ Duty Cycle 1% Starting Data Sheet D18590EJ2V0DS NP109N04PUG MIN. TYP. MAX. UNIT μ ±100 nA 2.0 3.0 4 1.7 2.3 mΩ 10500 15750 pF 980 1470 pF 630 1140 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 250 200 150 100 50 0 150 175 0 25 100 R = 83.3°C/Wi th(ch- 0.68°C/Wi th(ch- 100 Pulse Width - s Data Sheet D18590EJ2V0DS NP109N04PUG 50 75 100 125 150 175 - Case Temperature - ° Single pulse 100 1000 3 ...

Page 4

... FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 10 1 0.1 150 200 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 Data Sheet D18590EJ2V0DS NP109N04PUG 25°C 75° Pulsed Gate to Source Voltage - V 150°C 175°C = −55° 25°C 75°C ...

Page 5

... 100 Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 10 1.5 0 Diode Forward Current - A F Data Sheet D18590EJ2V0DS NP109N04PUG C iss C oss C rss 1 10 100 110 100 150 200 di/dt = 100 A/μ ...

Page 6

... Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 1.3 ±0.2 0.025 to 0.25 Data Sheet D18590EJ2V0DS NP109N04PUG ...

Page 7

... MARKING INFORMATION 109N04 UG RECOMMENDED SOLDERING CONDITIONS The NP109N04PUG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP109N04PUG M8E 02. 11-1 ...

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