NP109N04PUG Renesas Electronics Corporation., NP109N04PUG Datasheet - Page 6

• Manufacturer Part Number: NP109N04PUG
• Description: Mos Field Effect Transistor Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
6
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
EQUIVALENT CIRCUIT
No plating
0.75 ±0.2
Gate
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
10.0 ±0.3
7.88 MIN.
1
2
2.54
Source
Drain
0.5
4
3
Body
Diode
1. Gate
2. Drain
3. Source
4. Fin (Drain)
4.45 ±0.2
0.25
1.3 ±0.2
0.025
to 0.25
Data Sheet D18590EJ2V0DS
NP109N04PUG