NP109N04PUG Renesas Electronics Corporation., NP109N04PUG Datasheet - Page 3

• Manufacturer Part Number: NP109N04PUG
• Description: Mos Field Effect Transistor Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
1000
120
100
100
0.1
80
60
40
20
10
0
1
0.1
0
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
R
(V
T
Single pulse
DS(on)
C
GS
= 25°C
25
= 10 V)
V
Limited
DS
T
C
- Drain to Source Voltage - V
I
- Case Temperature - °C
D(DC)
50
0.01
100
0.1
10
1
1
I
D(pulse)
100
DC
75
μ
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 m
10
125
A
= 25°C)
150
10 m
Data Sheet D18590EJ2V0DS
175
100
100 m
PW - Pulse Width - s
R
R
th(ch-A)
th(ch-C)
=
=
83.3°C/Wi
0.68°C/Wi
1
250
200
150
100
50
0
0
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
T
C
- Case Temperature - °C
50
Single pulse
100
75
100
1000
NP109N04PUG
125
150
175
3