MT41J512M8 Micron Semiconductor Products, MT41J512M8 Datasheet - Page 10

• Manufacturer Part Number: MT41J512M8
• Description: Twindietm Ddr3 Sdram Mt41j1g4 ? 64 Meg X 4 X 8 Banks X 2 Ranks Mt41j512m8 ? 32 Meg X 8 X 8 Banks X 2 Ranks
• Manufacturer: Micron Semiconductor Products

Table 5:
Table 6:
Figure 5:
PDF: 09005aef83188bab/Source: 09005aef83169de6
MT41J1G4_64M_32M_twindie.fm - Rev. F 11/09 EN
Parameter/Condition
Operating case temperature
Die Rev
A
D
Package
82-ball
78-ball
Thermal Characteristics
Thermal Impedance
Temperature Test Point Location
Notes: 1. MAX operating case temperature. T
Notes: 1. Thermal resistance data is based upon a number of samples from multiple lots and should
Substrate
2-layer
4-layer
2-layer
4-layer
Test point
2. A thermal solution must be designed to ensure the DRAM device does not exceed the max-
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
4. If T
(see Figure 5).
imum T
operation.
interval refresh rate. The use of self refresh temperature (SRT) or automatic self refresh
(ASR), if available, must be enabled.
be viewed as a typical number.
C
exceeds 85°C, the DRAM must be refreshed externally at 2X refresh, which is a 3.9µs
θJA (°C/W)
Airflow =
C
during operation.
0m/s
46.0
34.2
61.0
44.5
θJA (°C/W)
Airflow =
Width (W)
1m/s
33.9
27.1
43.7
35.3
10
Symbol
T
C
0.5 (W)
C
θJA (°C/W)
Airflow =
is measured in the center of the package
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2m/s
28.1
23.6
37.3
31.5
4Gb: x4, x8 TwinDie DDR3 SDRAM
0 to 85
0 to 95
Value
0.5 (L)
θJB (°C/W)
Length (L)
25.6
23.2
27.1
23.2
Electrical Specifications
Units
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θJC (°C/W)
°C
°C
1.73
2.8
1, 2, 3, 4
Notes
1, 2, 3
Notes
C
1
1
during