STP9435A Stanson Technology Co., Ltd., STP9435A Datasheet

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STP9435A

Manufacturer Part Number
STP9435A
Description
P Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP9435A
Manufacturer:
STANSON
Quantity:
20 000
Part Number:
STP9435A/STP9435
Manufacturer:
ST
0
Part Number:
STP9435A/STP9435
Manufacturer:
STANSON
Quantity:
20 000
DESCRIPTION
ST9435A is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as battery pack, notebook
computer power management, and other battery powered circuits.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
ORDERING INFORMATION
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
※ ST9435AS8RG
※ ST9435AS8TG
※ Process Code : A ~ Z ; a ~ z
ST9435AS8RG
Part Number
ST9435AS8TG
S8 : SOP-8 ; T : Tube ; G : Pb – Free
S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
Package
SOP-8P
SOP-8P
FEATURE
P Channel Enhancement Mode MOSFET
extremely low R
-30V/-5.6A, R
-30V/-5.0A, R
-30V/-4.4A, R
Super high density cell design for
Exceptional on-resistance and maximum DC
current capability
SOP-8 package design
ST9435A
@V
@V
@V
DS(ON)
DS(ON)
DS(ON)
Copyright © 2007, Stanson Corp.
DS(ON)
Part Marking
GS
GS
GS
ST9435A
ST9435A
= -10V
= -4.5V
= 57mΩ (Typ.)
= 72mΩ
= -6.0V
= 95mΩ
ST9435A 2007. V1
-
5.6A

Related parts for STP9435A

STP9435A Summary of contents

Page 1

DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low ...

Page 2

ABSOULTE MAXIMUM RATINGS ( ℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ℃ ) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction ...

Page 3

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Static Drain-Source V (BR)DSS Breakdown Voltage Gate Threshold V GS(th) Voltage Gate Leakage Current I Zero Gate Voltage I Drain Current On-State Drain I Current Drain-source On- R ...

Page 4

TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST9435A P Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. ST9435A 2007. V1 5.6A - ...

Page 5

TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST9435A P Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. ST9435A 2007. V1 5.6A - ...

Page 6

TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST9435A P Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. ST9435A 2007. V1 5.6A - ...

Page 7

PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST9435A P Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. ST9435A 2007. V1 5.6A - ...

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