BSM150GAL120DN2E3166 Siemens (acquired by Infineon Technologies Corporation), BSM150GAL120DN2E3166 Datasheet
BSM150GAL120DN2E3166
Manufacturer Part Number
BSM150GAL120DN2E3166
Description
Igbt Power Module ( Single Switch With Chopper Diode Including Fast Free-wheeling Diodes )
Manufacturer
Siemens (acquired by Infineon Technologies Corporation)
Datasheet
1.BSM150GAL120DN2E3166.pdf
(5 pages)
IGBT Power Module
Semiconductor Group
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM150GAL120DN2E3166 1200V 210A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
V
= 1 ms
CE
I
C
1
Package
HALF BRIDGE GAL 2 C67076-A2112-A70
Symbol
V
V
V
I
I
P
T
T
R
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
THJCDC
BSM150GAL120DN2E3166
Ordering Code
55 / 150 / 56
-55 ... + 150
Values
+ 150
± 20
1200
1200
1250
4000
0.125
210
150
420
300
F
0.25
20
11
0.1
Nov-08-1996
Unit
V
A
W
°C
K/W
Vac
mm
sec
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