BSM15GD120D2 Siemens (acquired by Infineon Technologies Corporation), BSM15GD120D2 Datasheet

no-image

BSM15GD120D2

Manufacturer Part Number
BSM15GD120D2
Description
Igbt Power Module ( Power Module 3-phase Full-bridge Including Fast Free-wheel Diodes )
Manufacturer
Siemens (acquired by Infineon Technologies Corporation)
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM15GD120D2
Manufacturer:
西门子
Quantity:
20 000
IGBT Power Module
Semiconductor Group
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 15 GD 120 D2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 25A
CE
I
C
1
Package
SIXPACK 1
Symbol
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
55 / 150 / 56
-55 ... + 150
Values
Ordering Code
C67076-A2504-A17
BSM 15 GD 120 D2
+ 150
± 20
1200
1200
2500
145
F
0.86
25
15
50
30
16
11
1.5
Feb-10-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

Related parts for BSM15GD120D2

Related keywords