BSM50GD60DN2E3226 Siemens (acquired by Infineon Technologies Corporation), BSM50GD60DN2E3226 Datasheet
BSM50GD60DN2E3226
Manufacturer Part Number
BSM50GD60DN2E3226
Description
Igbt Power Module ( Power Module 3-phase Full-bridge Including Fast Free-wheel Diodes )
Manufacturer
Siemens (acquired by Infineon Technologies Corporation)
Datasheet
1.BSM50GD60DN2E3226.pdf
(9 pages)
IGBT Power Module
Semiconductor Group
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• E3226: long terminals, limited current per terminal
Type
BSM50GD60DN2E3226
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
Pulsed collector current, t
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
GE
= 25 °C
= 25 °C
= 25 °C
= 20 k
p
= 1 ms
V
600V
CE
I
50A
C
1
Package
ECONOPACK 2
Symbol
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
BSM50GD60DN2E3226
55 / 150 / 56
-55 ... + 150
Values
Ordering Code
C67070-A2515-A67
+ 150
± 20
2500
600
600
100
200
F
50
16
11
0.6
1.5
Jan-10-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec
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