XC912BC32CFU8 Motorola Semiconductor Products, XC912BC32CFU8 Datasheet - Page 112

• Manufacturer Part Number: XC912BC32CFU8
• Description: M68HC12B Family Data Sheet
• Manufacturer: Motorola Semiconductor Products

FLASH EEPROM
8.5 Programming the FLASH EEPROM
Data Sheet
112
Programming the FLASH EEPROM is accomplished by this step-by-step
procedure. The V
the first time.
The flowchart in
sequence.
10. If the location is programmed, repeat the same number of pulses as required
11. Read the address location to verify that it remains programmed.
12. Clear LAT.
13. If there are more locations to program, repeat steps 2 through 10.
14. Turn off V
1. Apply program/erase voltage to the V
2. Clear ERAS and set the LAT bit in the FEECTL register to establish program
3. Write data to a valid address. The address and data are latched. If BOOTP
4. Apply programming voltage by setting ENPE.
5. Delay for one programming pulse, t
6. Remove programming voltage by clearing ENPE.
7. Delay while high voltage is turning off, t
8. Read the address location to verify that it has been programmed,
9. If the location is not programmed, repeat steps 4 through 7 until the location
mode and enable programming address and data latches.
is asserted, an attempt to program an address in the boot block will be
ignored.
is programmed or until the specified maximum number of program pulses,
n
to program the location. This provides 100 percent program margin.
PP
, has been reached.
FP
Figure 8-5
FP
. Reduce voltage on V
pin voltage must be at the proper level prior to executing step 4
FLASH EEPROM
demonstrates the recommended programming
FP
PPULSE
FP
pin to V
VPROG
pin.
.
DD
.
.
M68HC12B Family — Rev. 8.0
MOTOROLA