BGA420E6327 Infineon Technologies Corporation, BGA420E6327 Datasheet
BGA420E6327
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BGA420E6327 Summary of contents
Page 1
Si-MMIC-Amplifier in SIEGET 25-Technologie Cascadable 50 - gain block Unconditionally stable 2 Gain | 1.8 GHz +13 dBm at 1.8 GHz 3out ( ...
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Electrical Characteristics at T Parameter AC characteristics Device current Insertion power gain f = 0.1 GHz GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = ...
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Typical S-Parameters GHz MAG ANG 0.1 0.5686 -8.5 0.5 0.5066 -19.2 0.8 0.4404 -28.7 1 0.3904 -34.6 1.5 0.2841 -50.5 1.8 0.2343 -60.6 1.9 0.2136 ...
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Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : 0.21024 39.251 V VAF = 1.7763 - NE = 34.368 V VAR = 1.3152 - NC = 1.3491 RBM = 3.7265 fF CJE = 4.5899 ...
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Insertion power gain | parameter VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA dB VD=2V, ID=3,4mA Noise figure ( parameter ...
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Intercept point at the output (f) 3out parameter VD=5V, ID=12.4mA dBm VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3.4mA Intercept ...