BGA425 Infineon Technologies Corporation, BGA425 Datasheet
BGA425
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BGA425 Summary of contents
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Si-MMIC-Amplifier in SIEGET 25-Technologie Multifunctional casc Unconditionally stable 2 Gain | 18 1.8 GHz (Appl. gain | 1.8 GHz (Appl. ...
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Electrical Characteristics at T Parameter AC characteristics Device current Insertion power gain f = 0.1 GHz GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 ...
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Typical configuration Application (LNA) Application 4 (Mix) Appl.1 100 pF RF OUT BGA 425 100 Appl.3 100 pF 100 pF RF OUT BGA 425 100 Note: 1) ...
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Electrical characteristics Application Applic. Insertion Gain (dB) 21 Frequ. (GHz) 0 18.5 1 (LNA (LNA ...
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For linear simulation please use on-wafer measurement data of our T501 chip an add resistive and capacitive elements, parasitics and package equivalent circuit. S-Parameters ° GHz MAG ANG T1 1.7 ...
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Spice model +V BGA 425-chip including parasitics C’-E’- Diode 12, 15 GND ...
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Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : 0.21024 39.251 V VAF = 1.7763 - NE = 34.368 V VAR = 1.3152 - NC = 1.3491 RBM = 3.7265 fF CJE = 4.5899 ...
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Insertion power gain | parameter VD=5V, ID=17.5mA VD=4V, ID=13.3mA dB VD=3V, ID=9.5mA VD=2V, ID=5.2mA Intercept point at the output IP = ...