BGA427E6327 Infineon Technologies Corporation, BGA427E6327 Datasheet

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BGA427E6327

Manufacturer Part Number
BGA427E6327
Description
Si-mmic-amplifier in Sieget 25-technologie
Manufacturer
Infineon Technologies Corporation
Datasheet

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Si-MMIC-Amplifier






ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BGA427
Maximum Ratings
Parameter
Device current
Device voltage
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Total power dissipation
T
Junction - soldering point
1 For calculation of R
Cascadable 50
Unconditionally stable
Gain |S
Noise figure NF = 2.2 dB at 1.8 GHz
Typical device voltage V
Reverse isolation
S
gain |S
IP
= 120 °C
3out
= +7 dBm at 1.8 GHz (V
21
21
|
|
2
2
= 22 dB at 1.8 GHz (Appl.2)
= 18.5 dB at 1.8 GHz (Appl.1)

thJA
- gain block

in SIEGET 25-Technologie
35 dB (Appl.2)
please refer to Application Note Thermal Resistance
Marking
BMs
1)
D
= 2 V to 5 V
D
=3V, I
1, IN
D
Circuit Diagram
=9.4mA)
Pin Configuration
2, GND 3, +V
1
Symbol
I
V
P
P
T
T
T
R
D
j
A
stg
D
tot
RFin
thJS
,+V
IN
4
1
4, Out
-65 ... 150
-65 ... 150
Value

3
150
150
-10
25
295
6
Package
SOT343
2
1
GND
Aug-02-2001
BGA427
VPS05605
2
Unit
V
mA
mW
dBm
°C
K/W
3
4
EHA07378
OUT
+
V

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BGA427E6327 Summary of contents

Page 1

Si-MMIC-Amplifier in SIEGET 25-Technologie Cascadable 50 - gain block   Unconditionally stable  2 Gain | 18 1.8 GHz (Appl. gain | 1.8 GHz (Appl. ...

Page 2

Electrical Characteristics at T Parameter AC characteristics Insertion power gain f = 0.1 GHz GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz ...

Page 3

S-Parameters °C, (Testfixture, Appl. GHz MAG ANG 0.1 0.1382 -38.3 0.2 0.1179 -16 0.5 0.1697 -20.8 0.8 0.1824 -56.9 0.9 0.1782 -69.1 1 ...

Page 4

Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax 0.21024 fA VAF = 39.251 1.7763 - VAR = 34.368 1.3152 - RBM = 1.3491  CJE = 3.7265 4.5899 ps ...

Page 5

Insertion power gain | parameter Intercept point at the output (f) 3out parameter D D ...

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