HY27UA1G1M Hynix Semiconductor, HY27UA1G1M Datasheet - Page 13

• Manufacturer Part Number: HY27UA1G1M
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

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Once the Read A and Read C commands have been issued the pointer remains in the respective areas until another
pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been
executed in Area B the pointer returns automatically to Area A.
The pointer operations can also be used before a program operation, that is the appropriate code (00h, 01h or 50h)
can be issued before the program command 80h is issued (see Figure 9).
Rev 0.5 / Oct. 2004
I/O
I/O
I/O
Bytes 0-255
Area A
(00h)
A
00h
01h
50h
(00h, 01h, 50h)
80h
80h
80h
x8 Devices
Bytes 256-511
Pointer
Area B
(01h)
B
Address
Address
Address
Inputs
Inputs
Inputs
AREA A, B, C can be programmed depending on how much data is input.
AREA B, C can be programmed depending on how much data is input.
Figure 9. Pointer Operations for Programming
The 01h command must be re-issued before each program.
512-527
Area C
(50h)
Bytes
C
Input
Input
Input
Data
Data
Data
Figure 8. Pointer Operation
Subsequent 00h commands can be omitted.
Subsequent 50h commands can be omitted.
Only Areas C can be programmed.
Page Buffer
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
10h
10h
10h
AREA A
AREA B
AREA C
00h
01h
50h
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
80h
80h
80h
Word 0-256
Area A
(00h)
A
x16 Devices
Address
Address
Address
Inputs
Inputs
Inputs
(00h, 50h)
Pointer
Input
Input
Input
Data
Data
Data
256-263
Area C
Words
(50h)
C
10h
10h
10h
Page Buffer
13