HY27UA1G1M Hynix Semiconductor, HY27UA1G1M Datasheet - Page 38

• Manufacturer Part Number: HY27UA1G1M
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

www.DataSheet4U.com
Ready/Busy Signal Electrical Characteristics
Figures 32, 33 and 34 show the electrical characteristics for the Ready/Busy signal. The value required for the resistor
R
where I
maximum value of tr.
Rev 0.5 / Oct. 2004
P
can be calculated using the following equation:
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
ready
Vcc
Figure 32. Ready/Busy AC Waveform
Figure 33. Ready/Busy Load Circuit
Device
Vcc
Vss
tf
V
OL
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
busy
Rp
RB
Open Drain Output
ibusy
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
tr
V
OH
P
max is determined by the
38