HY27UA1G1M Hynix Semiconductor, HY27UA1G1M Datasheet - Page 34

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HY27UA1G1M

Manufacturer Part Number
HY27UA1G1M
Description
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet
www.DataSheet4U.com
Note: 1. A0-A7 is the address in the Spare Memory area, where A0-A3 are valid and A4-A7 are don't care.
Rev 0.5 / Oct. 2004
ALE
RE
CLE
CE
WE
I/O
RB
2. Only address cycle 4 is required.
Command
Code
50h
Add. M
cycle 1
Figure 28. Read C Operation, One Page AC Waveform
Add. M
cycle 2
Address M Input
Add. M
cycle 3
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
tWHALL
Add. M
cycle 4
Busy
HY27UA(08/16)1G1M Series
tBHRL
HY27SA(08/16)1G1M Series
tWHBH
Last Byte or Word in Area C
Data Output from M to
tALLRL2
Data M
Data
Last
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