BC817-16W Infineon Technologies Corporation, BC817-16W Datasheet
BC817-16W
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BC817-16W Summary of contents
Page 1
... NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (PNP) Type Marking 6As BC817-16W 6Bs BC817-25W 6Cs BC817-40W 6Es BC818-16W 6Fs BC818-25W 6Gs BC818-40W Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage ...
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... BC817W BC818W V (BR)EBO I CBO I CBO I EBO -grp -grp -grp -grp -grp -grp CEsat V BEsat 2 BC817W, BC818W Values Unit min. typ. max 100 µ 100 nA - 100 160 250 160 ...
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... Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance MHz EB = 25°C, unless otherwise specified. A Symbol BC817W, BC818W Values Unit min. typ. max. - 170 - MHz - Nov-29-2001 ...
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... 120 °C 100 150 T S Collector cutoff current I V CBO 10 nA CBO BC817W, BC818W = f (t thJS 0.5 0.2 0.1 0.05 0.02 0 0.01 0.005 CBO = 25V BC 817/818 5 4 max 3 ...
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... C Collector-emitter saturation voltage EHP00222 3.0 V 4.0 V BEsat 5 BC817W, BC818W = 817/818 CEsat FE 150 ˚C 25 ˚C -50 ˚C 0 0.2 0.4 0.6 Nov-29-2001 EHP00218 EHP00215 V 0.8 V CEsat ...