BC860BWE6327 Infineon Technologies Corporation, BC860BWE6327 Datasheet
BC860BWE6327
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BC860BWE6327 Summary of contents
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... PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC846W, BC847W, BC848W BC849W, BC850W (NPN) Type Marking 3As BC856AW 3Bs BC856BW 3Es BC857AW 3Fs BC857BW 3Gs ...
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Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation Junction temperature Storage temperature Thermal Resistance 1) Junction - soldering point Electrical ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage = 10 µ Emitter-base breakdown voltage = 1 µ Collector cutoff current = ...
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Electrical Characteristics at T Parameter AC characteristics Transition frequency = 20 mA 100 MHz Collector-base capacitance = MHz V CB Emitter-base capacitance = 0 ...
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Total power dissipation P 300 mW 200 150 100 Permissible pulse load totmax totDC tot max ...
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Collector cutoff current I CBO V = 30V CB0 max current gain ...
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856...860 11e 12e 21e h 22e - ...
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Noise figure 5V 120Hz CE BC 856...860 100 Noise figure F ...