MT54W1MH36B Micron Technology, MT54W1MH36B Datasheet

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MT54W1MH36B

Manufacturer Part Number
MT54W1MH36B
Description
SRAM 2-WORD BURST
Manufacturer
Micron Technology
Datasheet
36Mb QDR
2-WORD BURST
FEATURES
• DLL circuitry for accurate output data placement
• Separate independent read and write data ports
• 100 percent bus utilization DDR READ and WRITE
• Fast clock to valid data times
• Full data coherency, providing most current data
• Two-tick burst counter for low DDR transaction size
• Double data rate operation on read and write ports
• Two input clocks (K and K#) for precise DDR timing
• Two output clocks (C and C#) for precise flight time
• Single address bus
• Simple control logic for easy depth expansion
• Internally self-timed, registered writes
• +1.8V core and HSTL I/O
• Clock-stop capability
• 15mm x 17mm, 1mm pitch, 11 x 15 grid FBGA
• User-programmable impedance output
• JTAG boundary scan
NOTE:
36Mb: 1.8V V
MT54W2MH18B_A.fm - Rev. 9/02
OPTIONS
• Clock Cycle Timing
• Configurations
• Package
1. A Part Marking Guide for the FBGA devices can be found
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
with concurrent transactions
operation
at clock rising edges only
and clock skew matching—clock and data delivered
together to receiving device
package
on Micron’s Web
guide.
4ns (250 MHz)
5ns (200 MHz)
6ns (167 MHz)
7.5ns (133 MHz)
4 Meg x 8
4 Meg x 9
2 Meg x 18
1 Meg x 36
165-ball, 15mm x 17mm FBGA
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
DD
, HSTL, QDRIIb2 SRAM
site—http://www.micron.com/number-
II SRAM
MT54W2MH18B
MT54W1MH36B
MT54W4MH8B
MT54W4MH9B
MARKING
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
-7.5
-4
-5
-6
F
1
1
VALID PART NUMBERS
GENERAL DESCRIPTION
nous, pipelined burst SRAM employs high-speed, low-
power CMOS designs using an advanced 6T CMOS
process.
(double data rate) ports to access the memory array.
The read port has dedicated data outputs to support
READ operations. The write port has dedicated data
inputs to support WRITE operations. This architecture
eliminates the need for high-speed bus turnaround.
Access to each port is accomplished using a common
address bus. Addresses for reads and writes are latched
on rising edges of the K and K# input clocks, respec-
tively. Each address location is associated with two
words that burst sequentially into or out of the device.
MT54W4MH8B
MT54W4MH9B
MT54W2MH18B
MT54W1MH36B
MT54W4MH8BF-xx
MT54W4MH9BF-xx
MT54W2MH18BF-xx
MT54W1MH36BF-xx
The Micron
The QDR architecture consists of two separate DDR
1.8V V
PART NUMBER
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
®
QDR™II (Quad Data Rate™) synchro-
, HSTL, QDRIIb2 SRAM
165-Ball FBGA
Figure 1
4 Meg x 8, QDRIIb2 FBGA
4 Meg x 9, QDRIIb2 FBGA
2 Meg x 18, QDRIIb2 FBGA
1 Meg x 36, QDRIIb2 FBGA
DESCRIPTION
www.DataSheet4U.com
©2002, Micron Technology Inc.
ADVANCE

Related parts for MT54W1MH36B

MT54W1MH36B Summary of contents

Page 1

... MT54W4MH9B The read port has dedicated data outputs to support MT54W2MH18B READ operations. The write port has dedicated data MT54W1MH36B inputs to support WRITE operations. This architecture eliminates the need for high-speed bus turnaround. F Access to each port is accomplished using a common address bus ...

Page 2

... MEMORY ARRAY Micron Technology, Inc., reserves the right to change products or specifications without notice. 2 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD (www.micron.com ...

Page 3

... Figure 3 Application Example SRAM # 250 REF Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD . The value of the SS Q, which will place DD SRAM # ...

Page 4

... All pending transactions are completed prior to a port deselecting. Depth expansion requires repli- cating R# and W# control signals for each bank desired to have the bank independent of READ and WRITE operations. Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD © ...

Page 5

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 www.DataSheet4U.com , HSTL, QDRIIb2 SRAM NC/ NW0 ...

Page 6

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 6 www.DataSheet4U.com , HSTL, QDRIIb2 SRAM NC/ BW0 ...

Page 7

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 www.DataSheet4U.com , HSTL, QDRIIb2 SRAM NC/ BW0 ...

Page 8

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 www.DataSheet4U.com , HSTL, QDRIIb2 SRAM BW1 D17 Q17 BW0 D16 Q7 SS ...

Page 9

... HSTL, QDRIIb2 SRAM DD MT54W2MH18B_A.fm - Rev 9/02 4 MEG MEG MEG x 18, 1 MEG x 36 1.8V V DESCRIPTION Q/2, but may be adjusted to improve system DD Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD if the JTAG function is not enable DD © ...

Page 10

... No Connect: These signals are not internally connected and may be connected to ground to improve package heat dissipation. 36Mb: 1. HSTL, QDRIIb2 SRAM DD MT54W2MH18B_A.fm - Rev 9/02 4 MEG MEG MEG x 18, 1 MEG x 36 1.8V V DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD ©2002, Micron Technology Inc. ...

Page 11

... MEG MEG MEG x 18, 1 MEG x 36 1.8V V Figure 4 Bus Cycle State Diagram RD RD READ DOUBLE WT WT WRITE DOUBLE AT K# Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD READ PORT NOP R_Init=0 Supply voltage /RD provided ...

Page 12

... L® L® L® Stopped X X Micron Technology, Inc., reserves the right to change products or specifications without notice. 12 ADVANCE HSTL, QDRIIb2 SRAM K(t)­ ...

Page 13

... DD t KHKH/2 £ 1.7V and V Q £ 1.4V for t £ 200ms Control input signals may not have pulse widths less than DD t KHKH (MIN). Micron Technology, Inc., reserves the right to change products or specifications without notice. 13 www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD MIN MAX UNITS ...

Page 14

... Typical value is measured at 6ns cycle time 1.5V, and temperature = 25° Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD MAX - -7.5 600 490 415 ...

Page 15

... MT54W2MH18B_A.fm - Rev 9/02 4 MEG MEG MEG x 18, 1 MEG MIN MAX MIN MAX 4.00 5.00 5.00 6.00 0.20 0.20 1.60 2.00 1.60 2.00 1.80 2.20 1.80 2.20 0.00 1.80 0.00 2.30 1,024 1,024 30 30 0.40 0.43 -0.40 -0.43 0.33 0.36 -0.33 -0.36 0.35 0.38 -0.35 -0.38 0.0 0.43 -0.40 -0.43 0.40 0.50 0.40 0.50 0.40 0.50 Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD -6 -7.5 MIN MAX MIN MAX 6.0 7.50 7.50 8.00 0.20 0.20 2.40 3.00 2.40 3.00 2.70 3.38 2.70 3.38 0.00 2.80 0.00 3.55 1,024 1,024 30 30 0.45 0.45 -0.45 -0.45 0.38 0.38 -0.38 -0.38 0.40 0.40 -0.40 -0.40 0.45 0.45 -0.45 -0.45 0.60 0.70 0.60 ...

Page 16

... MEG MEG MEG x 18, 1 MEG MIN MAX MIN MAX 0.40 0.50 0.40 0.50 0.40 0.50 t KHKL (MIN). t KHKH (MAX). See Micron Technical Note TN-54-02 for more information. Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD -6 -7.5 MIN MAX MIN MAX 0.60 0.70 0.70 0.70 0.60 0.70 and input clock are stable ...

Page 17

... Output load . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 5 36Mb: 1. HSTL, QDRIIb2 SRAM DD MT54W2MH18B_A.fm - Rev 9/02 4 MEG MEG MEG x 18, 1 MEG x 36 1.8V V Output Load Equivalent Q/2 DD SRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. 17 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD Figure 5 0.75V V Q/2 DD ...

Page 18

... DVKH t KHDX (Note 1) Q00 Q01 t CHQX1 t CHQX t CHQX t CHQV t CHQV t KHK#H t KHKH t CHCQV t CHCQX t CHCQV t CHCQX Micron Technology, Inc., reserves the right to change products or specifications without notice. 18 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD 3 NOP WRITE NOP (Note D60 D61 ...

Page 19

... TAP state machine. (See Figure 7.) The output changes on the falling edge of TCK. TDO is connected to the least-significant bit (LSB) of any register, as depicted in Figure 8. Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM ...

Page 20

... Instructions are loaded into the TAP controller dur- ing the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction regis- Micron Technology, Inc., reserves the right to change products or specifications without notice. 20 ADVANCE www.DataSheet4U.com ...

Page 21

... RESERVED These instructions are not implemented but are reserved for future use. Do not use these instructions. Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM ...

Page 22

... TAP Timing THTL t THTH TLTH t MVTH t THMX t DVTH t THDX DON’T CARE 1,2 SYMBOL Micron Technology, Inc., reserves the right to change products or specifications without notice. 22 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM TLOV t TLOX UNDEFINED MIN MAX t 100 THTH ...

Page 23

... KHKH/2 £ +1.7V and V Q £ 1.4V for t £ 200ms Control input signals (R#, W#, etc.) may not have pulse widths less than (MAX). Micron Technology, Inc., reserves the right to change products or specifications without notice. 23 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD Figure 10 0.9V 50 ...

Page 24

... Do Not Use: This instruction is reserved for future use. 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Micron Technology, Inc., reserves the right to change products or specifications without notice. 24 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD © ...

Page 25

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 25 ADVANCE www.DataSheet4U.com , HSTL, QDRIIb2 SRAM DD BIT# FBGA BALL ...

Page 26

... E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron and the M logo are registered trademarks and SyncBurst and the Micron logo are trademarks of Micron Technology, Inc. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, Micron Technology, 36Mb: 1 ...

Page 27

... V , HSTL, QDRIIb2 SRAM DD MT54W2MH18B_A.fm - Rev 9/02 4 MEG MEG MEG x 18, 1 MEG x 36 1.8V V Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 ADVANCE HSTL, QDRIIb2 SRAM DD ©2002, Micron Technology Inc. ...

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