MT55L256V36F Micron Technology, MT55L256V36F Datasheet

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MT55L256V36F

Manufacturer Part Number
MT55L256V36F
Description
(MT55LxxxLxxF) 8Mb SRAM
Manufacturer
Micron Technology
Datasheet
www.DataSheet4U.com
8Mb
ZBT
FEATURES
• High frequency and 100 percent bus utilization
• Fast cycle times: 10ns, 11ns and 12ns
• Single +3.3V ±5% power supply (V
• Separate +3.3V or +2.5V isolated output buffer
• Advanced control logic for minimum control
• Individual BYTE WRITE controls may be tied LOW
• Single R/W# (read/write) control pin
• CKE# pin to enable clock and suspend operations
• Three chip enables for simple depth expansion
• Clock-controlled and registered addresses, data
• Internally self-timed, fully coherent WRITE
• Internally self-timed, registered outputs to
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Linear or Interleaved Burst Modes
• Burst feature (optional)
• Pin/function compatibility with 2Mb, 4Mb, and
• 100-pin TQFP
• 165-pin FBGA
• Automatic power-down
OPTIONS
• Timing (Access/Cycle/MHz)
• Configurations
• Package
• Operating Temperature Range
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
supply (V
signal interface
I/Os and control signals
eliminate the need to control OE#
18Mb ZBT SRAM
7.5ns/10ns/100 MHz
8.5ns/11ns/90 MHz
9ns/12ns/83 MHz
3.3V I/O
2.5V I/O
100-pin TQFP
165-pin FBGA
Commercial (0ºC to +70ºC)
Industrial (-40°C to +85°C)**
512K x 18
256K x 32
256K x 36
512K x 18
256K x 32
256K x 36
®
DD
SRAM
Q)
MT55L256L32FT-11
Part Number Example:
DD
MT55L512V18F
MT55L256V32F
MT55L256V36F
MT55L512L18F
MT55L256L32F
MT55L256L36F
MARKING
)
None
-10
-11
-12
IT
T
F*
1
MT55L512L18F, MT55L512V18F,
MT55L256L32F, MT55L256V32F,
MT55L256L36F, MT55L256V36F
3.3V V
* A Part Marking Guide for the FBGA devices can be found on Micron’s
** Industrial temperature range offered in specific speed grades and
GENERAL DESCRIPTION
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
256K x 32, or 256K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. These SRAMs are optimized for 100 percent
bus utilization, eliminating any turnaround cycles for
READ to WRITE, or WRITE to READ, transitions. All
synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input (CLK).
The synchronous inputs include all addresses, all data
inputs, chip enable (CE#), two additional chip enables
for easy depth expansion (CE2, CE2#), cycle start input
NOTE: 1. JEDEC-standard MS-026 BHA (LQFP).
Web
configurations. Contact factory for more information.
The Micron
Micron’s 8Mb ZBT SRAMs integrate a 512K x 18,
site—http://www.micron.com/support/index.html.
8Mb: 512K x 18, 256K x 32/36
DD
FLOW-THROUGH ZBT SRAM
, 3.3V or 2.5V I/O
Micron Technology, Inc., reserves the right to change products or specifications without notice.
®
Zero Bus Turnaround
100-Pin TQFP
165-Pin FBGA
1
©2002, Micron Technology, Inc.
(ZBT
®
) SRAM

Related parts for MT55L256V36F

MT55L256V36F Summary of contents

Page 1

... Part Number Example: MT55L256L32FT-11 8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM MT55L512L18F_C.p65 – Rev. 2/02 www.DataSheet4U.com 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L512V18F, MT55L256L32F, MT55L256V32F, MT55L256L36F, MT55L256V36F 3. 3.3V or 2.5V I NOTE: 1. JEDEC-standard MS-026 BHA (LQFP). MARKING - Part Marking Guide for the FBGA devices can be found on Micron’s Web site— ...

Page 2

... 256K (x36 MEMORY ARRAY INPUT E REGISTER Micron Technology, Inc., reserves the right to change products or specifications without notice. DQs 18 E DQs 36 DQPa DQPb DQPc DQPd E ©2002, Micron Technology, Inc. ...

Page 3

... The device is ideally suited for systems requir- ing high bandwidth and zero bus turnaround delays. Please refer to the (www.micron.com/sramds) for the latest data sheet. 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. DD Micron Web site ©2002, Micron Technology, Inc. ...

Page 4

... DQb DQb 97 DQb DQb 98 DQb DQb 99 DQb DQb 100 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. x32 x36 DQb DQb DQb DQb NF DQPb CKE# R/W# ...

Page 5

... MODE 31 (LBO DNU 42 DNU DNU 38 DNU 37 SA0 SA1 MODE 31 (LBO Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 6

... Snooze Enable: This active HIGH, asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. When ZZ is active, all other inputs are ignored. 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. DESCRIPTION ©2002, Micron Technology, Inc. ...

Page 7

... It is allowable to leave this pin unconnected or driven by signals. Pin 84 is reserved as an address pin for the 18Mb ZBT SRAM. 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. DESCRIPTION ©2002, Micron Technology, Inc. ...

Page 8

... DNU SA1 DNU DNU SA0 DNU SA TOP VIEW Micron Technology, Inc., reserves the right to change products or specifications without notice NF/DQPb DQb DQb ...

Page 9

... Input Output Enable: This active LOW, asynchronous input enables the data I/O output drivers. (continued on next page) 9 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 10

... Conditions for range. Q Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and DD Operating Conditions for range. (continued on next page) 10 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 11

... No Function: These pins are internally connected to the die and have the capacitance of an input pin allowable to leave these pins unconnected or driven by signals. 11 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 12

... X...X11 X...X00 X...X00 X...X01 X...X01 X...X10 BWa# BWb BWb# BWc# BWd Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 13

... READ BURST OPERATION DESELECT New READ New WRITE BURST READ, BURST WRITE, or CONTINUE DESELECT 13 FLOW-THROUGH ZBT SRAM BURST DS BEGIN WRITE WRITE BURST WRITE BURST BURST WRITE Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 14

... L-H High L-H High L High-Z Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. NOTES – 4 ...

Page 15

... -0.3 0 -1.0 1.0 µ -1.0 1.0 µ 2 0 3.135 3.465 3.135 Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES ©2002, Micron Technology, Inc. ...

Page 16

... 3 3 SYMBOL TYP MAX UNITS C 2.5 3 2.5 3.5 CK Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES NOTES NOTES p F ...

Page 17

... SYMBOL TYP increases with faster cycle times and DD Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES UNITS NOTES ° C/W 5 ° C/W 5 ...

Page 18

... Q = +3.3V ±0.165V) and DD Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES ° C ° C ° C UNITS NOTES ns MHz ...

Page 19

... Output load ............................. See Figures 3 and 4 2.5V I/O Output Load Equivalents 50 T 317 5pF 19 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM 1.25V T Figure 3 +2.5V 225 Q 5pF 225 Figure 4 Micron Technology, Inc., reserves the right to change products or specifications without notice ©2002, Micron Technology, Inc. ...

Page 20

... KHKH t t RZZ 0 KHKH t t ZZI KHKH t RZZI 0 t RZZ t RZZI DESELECT or READ Only Micron Technology, Inc., reserves the right to change products or specifications without notice. is guaranteed Z NOTES DON’T CARE ©2002, Micron Technology, Inc. ...

Page 21

... D(A5) t KHQX t GLQX BURST WRITE READ WRITE READ D(A5) Q(A6) D(A7) Q(A4+1) DON’T CARE -10 -11 MIN MAX MIN MAX MIN 5.0 5.0 2.0 2.2 2.5 2.0 2.2 2.5 2.0 2.2 2.5 2.0 2.2 2.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Micron Technology, Inc., reserves the right to change products or specifications without notice Q(A6) D(A7) DESELECT UNDEFINED -12 MAX UNITS 5 ©2002, Micron Technology, Inc. ...

Page 22

... A3 A4 Q(A2) Q(A3) STALL READ WRITE Q(A3) D(A4) -12 MIN MAX UNITS 3 FLOW-THROUGH ZBT SRAM D(A4) Q(A5) t KHQX STALL NOP READ DESELECT Q(A5) DON’T CARE Micron Technology, Inc., reserves the right to change products or specifications without notice KHQZ CONTINUE DESELECT UNDEFINED ©2002, Micron Technology, Inc. ...

Page 23

... Flow-Through ZBT SRAM MT55L512L18F_C.p65 – Rev. 2/02 100-PIN PLASTIC TQFP (JEDEC LQFP) +0.10 22.10 -0.15 20.10 ±0.10 0.62 GAGE PLANE 1.00 (TYP) 0.60 ±0.15 23 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM +0.03 0.15 -0.02 +0.06 0.32 -0.10 0.65 DETAIL A 1.50 ±0.10 0.10 0.25 0.10 1.40 ±0.05 DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. +0.10 -0.05 ©2002, Micron Technology, Inc. ...

Page 24

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc. ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by Micron Technology, Inc ...

Page 25

... Removed 119-Pin PBGA packages and references Added 165-pin FBGA Package ........................................................................................................................... 6/13/00 8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM MT55L512L18F_C.p65 – Rev. 2/02 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM 25 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

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