BUP307D Siemens Semiconductor Group, BUP307D Datasheet
BUP307D
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BUP307D Summary of contents
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IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 307D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...
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Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage ...
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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...
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Power dissipation tot C parameter: T 150 °C j 320 W P tot 240 200 160 120 Safe operating area ...
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Typ. output characteristics ( ) parameter µ 125 ° Typ. saturation characteristics CE(sat) GE parameter °C j ...
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Typ. gate charge Gate parameter puls 400 100 120 140 ...
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Typ. switching time inductive load 125 ° parameter 600 Typ. forward characteristics parameter ...