BUP307D Siemens Semiconductor Group, BUP307D Datasheet - Page 7

• Manufacturer Part Number: BUP307D
• Description: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
• Manufacturer: Siemens Semiconductor Group

Typ. switching time
t = f ( R
parameter: V
Typ. forward characteristics
I
Semiconductor Group
F
parameter: T
I
F
= f ( V
30
26
24
22
20
18
16
14
12
10
G
A
8
6
4
2
0
0.0
F
), inductive load, T
)
CE
j
0.5
= 600 V, V
1.0
T
j
=125°C
1.5
j
GE
= 125 °C
= ± 15 V, I
2.0
T
j
=25°C
V
C
V
F
= 15 A
3.0
7
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
10
= ( t
-1
-2
-3
1
0
10
-5
p
)
single pulse
10
p
-4
/ T
10
-3
10
-2
Diode
BUP 307D
Dec-02-1996
D = 0.50
10
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0