SMB1W-760 Roithner LaserTechnik GmbH, SMB1W-760 Datasheet

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SMB1W-760

Manufacturer Part Number
SMB1W-760
Description
High Power Led, Smd
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
TECHNICAL DATA
SMB1W-760 are AlGaAs High Power LEDs mounted on a cooper heat sink with a 5x5 mm SMD
package and molded with epoxy resin. On forward bias, it emits a radiation of typical 330 mW at a
peak wavelength of 760 nm.
Notes: Do not view directly into the emitting area of the LED during operation!
07.04.2011
Absolute Maximum Ratings (T
Power Dissipation
Forward Current
Pulse Forward Current *
Reverse Voltage
Thermal Resistance
Junction Temperature
Operating Temperature
Storage Temperature
Soldering Temperature *
Electro-Optical Characteristics
Forward Voltage
Pulsed Forward Current
Total Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
Specifications
High Power LED, SMD
Total Radiated Power is measured by S3584-08
Radiant Intensity is measured by Tektronix J-6512
*
*
1
2
Structure: AlGaAs, 1W high power chip
Peak Wavelength: typ. 760 nm
Optical Output Power: typ. 330 mW
Package
duty = 1%, pulse width = 10 µs
must be completed within 5 seconds
The above specifications are for reference purpose only and subjected to change without prior notice.
SMD, PPA resin
Lead frame die: silver plated on copper
Lens: epoxy resin
Item
Item
1
2
Symbol
Symbol
Θ
V
P
Δλ
V
λ
I
t
t
T
T
FP
E
1/2
T
r
R
O
P
f
P
V
F
I
T
I
FP
opr
stg
sol
F
D
R
th
J
SMB1W-760
a
=25°C)
-30 … +100
-30 … +85
I
I
I
I
I
I
I
I
Condition
F
F
F
F
F
F
F
F
I
I
I
Value
= 800 mA
= 800 mA
= 800 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
FP
FP
FP
2500
4000
800
100
255
10
5
= 4 A
= 4 A
= 4 A
SMB1W-760
Unit
K/W
mW
mA
mA
°C
°C
°C
°C
V
Min.
-
-
-
-
-
-
-
-
-
-
-
1650
Typ.
330
145
725
760
±62
2.0
4.5
25
80
80
Max.
2.5
5.5
-
-
-
-
-
-
-
-
-
AlGaAs
(Unit: mm)
mW/sr
Unit
deg.
mW
nm
nm
ns
ns
V
V
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SMB1W-760 Summary of contents

Page 1

... TECHNICAL DATA High Power LED, SMD SMB1W-760 are AlGaAs High Power LEDs mounted on a cooper heat sink with a 5x5 mm SMD package and molded with epoxy resin. On forward bias, it emits a radiation of typical 330 peak wavelength of 760 nm. Specifications • Structure: AlGaAs, 1W high power chip • ...

Page 2

... Typical Performance Curves Forward Current – Forward Voltage Forward Current – Pulse Duration 07.04.2011 Relative Radiant Intensity –Forward Current Allowed Forward Current – Ambient Temperature SMB1W-760 ...

Page 3

... Relative Radiant Intensity – Ambient Temperature Peak Wavelength 07.04.2011 Forward Voltage – Ambient Temperature Peak Wavelength – Ambient Temperature SMB1W-760 ...

Page 4

... Viewing half angle SMB1W-760 SMB1W-760-02 SMB1W-760-04 07.04.2011 SMB1W-760-01 SMB1W-760-03 SMB1W-760-05 SMB1W-760-09 SMB1W-760 ...

Page 5

... LEDs. • All devices, equipment and machinery must be grounded properly recommended that precautions should be taken against surge voltage to the equipment that mounts the LEDs. 07.04.2011 Recommended Land Layout (Unit: mm) Soldering Conditions SMB1W-760 ...

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