MMDF2C03HD ON Semiconductor, MMDF2C03HD Datasheet - Page 3

• Manufacturer Part Number: MMDF2C03HD
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

6. Negative signs for P−Channel device omitted for clarity.
7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS −
SOURCE−DRAIN DIODE CHARACTERISTICS (T
Forward Voltage (Note 7)
Reverse Recovery Time
Reverse Recovery Storage
Charge
6
5
4
3
2
1
0
6
5
4
3
2
1
0
2
0
4.5 V
4.3 V
4.1 V
V
GS
V
0.2
DS
= 10 V
Figure 1. On−Region Characteristics
≥ 10 V
Figure 2. Transfer Characteristics
V
V
0.4
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.5
3.7 V
0.6
N−Channel
3.9 V
Characteristic
0.8
T
J
= 100°C
3
1
3.5 V
− 55°C
(I
(I
(I
3.3 V
3.1 V
2.9 V
2.7 V
2.5 V
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
S
S
F
= 3.0 Adc, V
= 2.0 Adc, V
= I
continued (T
25°C
S
1.4
, dI
3.5
S
/dt = 100 A/ms)
C
1.6
T
= 25°C)
J
GS
GS
= 25°C
= 0 Vdc)
= 0 Vdc)
1.8
A
http://onsemi.com
MMDF2C03HD
= 25°C unless otherwise noted) (Note 6)
4
2
3
Symbol
Q
V
t
t
t
4
3
2
1
0
4
3
2
1
0
SD
rr
RR
a
b
1.5
0
V
0.2
1.7
DS
V
3.9 V
GS
Figure 1. On−Region Characteristics
≥ 10 V
Polarity
V
1.9
= 10 V
Figure 2. Transfer Characteristics
0.4
V
DS
(N)
(N)
(N)
(N)
(N)
(P)
(P)
(P)
(P)
(P)
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.1
0.6
4.5 V
25°C
2.3
P−Channel
Min
0.8
−
−
−
−
−
−
−
−
−
−
2.5
T
1
J
= 100°C
0.025
0.043
2.7
0.82
1.82
Typ
7.0
24
42
17
16
26
3.7 V
1.2
− 55°C
2.9 3.1
3.5 V
3.3 V
3.1 V
2.9 V
2.7 V
2.5 V
1.4
Max
1.2
2.0
−
−
−
−
−
−
−
−
1.6
T
3.3
J
= 25°C
1.8
3.5
Unit
Vdc
mC
ns
3.7
2