MMDF2C03HD ON Semiconductor, MMDF2C03HD Datasheet - Page 9

• Manufacturer Part Number: MMDF2C03HD
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

350
300
250
200
150
100
50
0
0.001
25
0.01
0.1
Figure 13. Maximum Avalanche Energy versus
10
1.0E−05
1
T
J
Starting Junction Temperature
50
, STARTING JUNCTION TEMPERATURE (°C)
D = 0.5
0.02
0.05
0.01
0.1
SINGLE PULSE
0.2
1.0E−04
N−Channel
75
TYPICAL ELECTRICAL CHARACTERISTICS
1.0E−03
Figure 15. Diode Reverse Recovery Waveform
100
I
S
t
Figure 14. Thermal Response
p
125
1.0E−02
http://onsemi.com
I
MMDF2C03HD
D
= 9 A
di/dt
t
a
150
9
t, TIME (s)
Chip
t
rr
1.0E−01
t
b
I
S
350
300
250
200
150
100
0.25 I
50
0.0175 W
0.0154 F
0
25
Figure 13. Maximum Avalanche Energy versus
S
1.0E+00
0.0854 F
0.0710 W
T
J
Starting Junction Temperature
, STARTING JUNCTION TEMPERATURE (°C)
50
Normalized to qja at 10s.
TIME
0.2706 W
0.3074 F
P−Channel
75
1.0E+01
1.7891 F
0.5776 W
100
1.0E+02
0.7086 W
107.55 F
125
Ambient
I
D
1.0E+03
= 6 A
150