MMDF2C03HD ON Semiconductor, MMDF2C03HD Datasheet - Page 4

• Manufacturer Part Number: MMDF2C03HD
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

0.08
0.07
0.06
0.05
0.6
0.5
0.4
0.3
0.2
0.1
2.0
1.5
1.0
0.5
−50
0
0
0
2
Figure 4. On−Resistance versus Drain Current
T
J
= 25°C
V
I
−25
Figure 5. On−Resistance Variation with
D
GS
3
= 1.5 A
0.5
= 10 V
V
Figure 3. On−Resistance versus
GS
I
T
D
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 1.5 A
= 25°C
0
T
4
Gate−To−Source Voltage
J
, JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
and Gate Voltage
1
25
5
Temperature
N−Channel
V
GS
10 V
1.5
50
6
= 4.5
TYPICAL ELECTRICAL CHARACTERISTICS
75
7
2
100
8
2.5
125
9
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MMDF2C03HD
150
10
3
4
0.30
0.25
0.20
0.15
0.10
0.8
0.6
1.6
1.4
1.2
1.0
0.6
0.5
0.4
0.3
0.2
0.1
−50
0
0
0
V
I
D
Figure 4. On−Resistance versus Drain Current
GS
= 2 A
− 25
T
1
I
J
T
0.5
= 10 V
D
J
Figure 5. On−Resistance Variation with
= 25°C
= 1 A
= 25°C
V
Figure 3. On−Resistance versus
GS
2
, GATE−TO−SOURCE VOLTAGE (VOLTS)
T
0
1
J
Gate−To−Source Voltage
, JUNCTION TEMPERATURE (°C)
I
3
D
, DRAIN CURRENT (AMPS)
1.5
25
and Gate Voltage
4
Temperature
P−Channel
50
5
2
V
GS
6
75
2.5
= 4.5 V
10 V
7
100
3
8
125
3.5
9
150
10
4