MC33910 Freescale Semiconductor, MC33910 Datasheet - Page 12

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MC33910

Manufacturer Part Number
MC33910
Description
LIN System Basis Chip
Manufacturer
Freescale Semiconductor
Datasheet

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Table 3. Static Electrical Characteristics (continued)
34910, unless otherwise noted. Typical values noted reflect the approximate parameter mean at T
conditions, unless otherwise noted.
12
33910
LIN PHYSICAL LAYER, TRANSCEIVER (LIN)
Notes
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Output Current Limitation
Leakage Output Current to GND
Receiver Input Voltages
LIN Transceiver Output Voltage
LIN Pull-up Resistor to V
Over-temperature Shutdown
Over-temperature Shutdown Hysteresis
36.
37.
Characteristics noted under conditions 5.5V ≤ V
Dominant State, V
Dominant State; V
Recessive State; 8V
GND Disconnected; GND
V
Receiver Dominant State
Receiver Recessive State
Receiver Threshold Center (V
Receiver Threshold Hysteresis (V
Recessive State, TXD HIGH, I
Dominant State, TXD LOW, 500Ω External Pull-up Resistor, LDVS =
0
Dominant State, TXD LOW, 500Ω External Pull-up Resistor, LDVS =
1
BAT
Parameters guaranteed for 7.0V
When Over-temperature shutdown occurs, the LIN bus goes in recessive state and the flag LINOT in LINSR is set.
disconnected; V
BUS
BUS
<
SUP
SUP_DEVICE
= 18V
= 0V; V
V
BAT
Characteristic
DEVICE
(37)
<
TH_DOM
BAT
OUT
18V; 8V
= V
TH_REC
= 12V
= GND; 0 < V
= 1.0 µA
SUP
+ V
V
<
; V
SUP
V
TH_REC
- V
BAT
BUS
(36)
TH_DOM
= 12V; 0 < V
18V.
<
BUS
)/2
18V; V
SUP
)
< 18V
BUS
≤ 18V, -40°C ≤ T
BUS
V
< 18V
BAT
I
I
BUS_PAS_DOM
I
BUS_PAS_REC
BUS_NO_GND
V
V
T
V
V
V
V
LIN_DOM_0
LIN_DOM_1
LINSD_HYS
Symbol
I
R
BUS_CNT
T
BUSDOM
BUSLIM
BUSREC
LIN_REC
V
A
I
SLAVE
LINSD
BUS
HYS
≤ 125°C for the 33910 and -40°C ≤ T
V
0.475
SUP
Min
-1.0
-1.0
150
0.6
40
20
-1
Analog Integrated Circuit Device Data
Typ
120
165
0.5
1.1
1.7
30
10
A
= 25°C under nominal
Freescale Semiconductor
0.525
0.175
Max
200
100
180
1.0
0.4
1.4
20
60
2
A
≤ 85°C for the
V
Unit
mA
mA
mA
µA
µA
kΩ
°C
°C
SUP
V

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