ZXTN2031F Zetex Semiconductors plc., ZXTN2031F Datasheet - Page 4

• Manufacturer Part Number: ZXTN2031F
• Description: 50v, Sot23, Npn Medium Power Transistor
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
(a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle
Issue 2 - January 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector-emitter cut-off
current
Collector-base cut-off current I
Emitter-base cut-off current
Static forward current
transfer ratio
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Base-emitter turn-on voltage V
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
V
V
V
V
I
I
H
V
V
f
C
t
t
t
t
CEV
CBO
EBO
T
(d)
(r)
(stg)
(f)
(BR)CBO
(BR)CEV
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
FE
amb
= 25°C unless otherwise stated)
Min.
190
200
200
7.0
80
80
50
80
4
Typ.
0.80
0.92
0.83
175
175
300
350
340
125
135
125
468
8.3
75
<1
<1
<1
13
30
80
29
16
27
44
Max.
2%.
0.90
1.00
0.93
560
110
170
20
20
10
18
40
Unit
MHz
mV
mV
mV
mV
nA
nA
nA
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
Conditions
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
Ic=500mA, V
f=50MHz
V
V
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
B1
CE
CB
EB
CB
CC
=10mA
=100µA
=10mA, V
=500mA, V
=2A, V
=5A, V
=0.1A, I
=1A, I
=2A, I
=5A, I
=2A, I
=5A, I
=5A, V
=100µA
=1µA, -1V< V
ZXTN2031F
=I
=60V, V
=6V
=60V
=10V, f=1MHz
=12V, I
B2
=125mA
www.zetex.com
B
B
B
B
B
CE
CE
CE
=100mA
=40mA
=250mA
=40mA
=250mA
B
(a)
=5mA
C
=2V
=2V
=2V
BE
CE
=2.5A,
CE
CE
BE
=2V
= -1V
(a)
(a)
(a)
=2V
=10V,
<+0.3V
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)