MRF6S23100Hxx Freescale Semiconductor, MRF6S23100Hxx Datasheet
MRF6S23100Hxx
Related parts for MRF6S23100Hxx
MRF6S23100Hxx Summary of contents
Page 1
... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...
Page 2
... Min Typ Max Unit — — 10 µAdc — — 1 µAdc — — 1 µAdc Vdc 2 2.8 4 Vdc 0.1 0.21 0.3 Vdc — 5.3 — S — 1.5 — Avg 2300 MHz, out 14 15 22.5 23.5 — — dBc - 38 - 40.5 — dBc — — Device Data Freescale Semiconductor ...
Page 3
... V Chip Capacitors (1825 µ Tantalum Capacitor C6 47 µ Tantalum Capacitor C10, C11 10 µ Chip Capacitors (2220) C12 330 µ Electrolytic Capacitor R1 10 Ω, 1/8 W Chip Resistor (1206) RF Device Data Freescale Semiconductor Z10 DUT Z9 ...
Page 4
... Figure 2. MRF6S23100HR3(HSR3) Test Circuit Component Layout MRF6S23100HR3 MRF6S23100HSR3 C10 C11 C12 C7 MRF6S23100 Rev 2.0 RF Device Data Freescale Semiconductor ...
Page 5
... P , OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS η Vdc (Avg.), I = 1000 mA DD out DQ 2−Carrier W−CDMA, 10 MHz Carrier Spacing G ps 3.84 MHz Channel Bandwidth PAR = 8 ...
Page 6
... IM3 −30_C −30 85_C −35 25_C −40 −30_C −45 85_C −50 25_C −55 100 I = 1000 2350 MHz 100 120 140 P , OUTPUT POWER (WATTS) CW out RF Device Data Freescale Semiconductor Actual 160 ...
Page 7
... MHz Bandwidth @ +10 MHz Offset. PAR = 8 0.01% Probability on CCDF 0.001 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 100 110 120 130 140 150 160 170 180 190 T , JUNCTION TEMPERATURE (° ...
Page 8
... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load load Ω Output Matching Network RF Device Data Freescale Semiconductor ...
Page 9
... RF Device Data Freescale Semiconductor NOTES MRF6S23100HR3 MRF6S23100HSR3 9 ...
Page 10
... MRF6S23100HR3 MRF6S23100HSR3 10 NOTES RF Device Data Freescale Semiconductor ...
Page 11
... U 4X (FLANGE (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS Q 2X bbb bbb ccc aaa ccc ...
Page 12
... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...