HS-4080ARH Intersil Corporation, HS-4080ARH Datasheet - Page 4

• Manufacturer Part Number: HS-4080ARH
• Description: Radiation Hardened Full Bridge N-Channel FET Driver
• Manufacturer: Intersil Corporation

Die Characteristics
DIE DIMENSIONS:
INTERFACE MATERIALS:
Glassivation:
Top Metallization:
Substrate:
Backside Finish:
Metallization Mask Layout
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
4760 m x 5660 m (188 mils x 223 mils)
Thickness: 483 m 25.4 m (19 mils 1 mil)
Type: Phosphorus Silicon Glass
Thickness: 8.0k
Type: AlSiCu
Thickness: 16.0k
Radiation Hardened Silicon Gate,
Dielectric Isolation
Silicon
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
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17
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19
20
1
2
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For information regarding Intersil Corporation and its products, see web site www.intersil.com
Å
Å
1.0k
2k
Å
Å
4
HS-4080ARH
HS-4080ARH
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
ADDITIONAL INFORMATION:
Worst Case Current Density:
Transistor Count:
Unbiased (DI)
<2.0 x 10
432
5
A/cm
2
15
14
13
12
11
10
9
8
7
6