MWS5114D3

Manufacturer Part NumberMWS5114D3
Description1024-Word x 4-Bit LSI Static RAM
ManufacturerIntersil Corporation
MWS5114D3 datasheet
 


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March 1997
Features
• Fully Static Operation
• Industry Standard 1024 x 4 Pinout (Same as Pinouts
for 6514, 2114, 9114, and 4045 Types)
• Common Data Input and Output
• Memory Retention for Standby Battery Voltage as Low
as 2V Min
• All Inputs and Outputs Directly TTL Compatible
• Three-State Outputs
• Low Standby and Operating Power
Ordering Information
200ns
250ns
MWS5114E3
MWS5114E2
MWS5114E2X
MWS5114D3
MWS5114D2
MWS5114D3X
Pinout
FUNCTION
Read
Write
Not Selected
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
|
http://www.intersil.com or 407-727-9207
Copyright
Description
The MWS5114 is a 1024 word by 4-bit static random access
memory that uses the ion-implanted silicon gate comple-
mentary MOS (CMOS) technology. It is designed for use in
memory systems where low power and simplicity in use are
desirable. This type has common data input and data output
and utilizes a single power supply of 4.5V to 6.5V.
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line
sidebrazed ceramic packages (D suffix) and in 18 lead dual-
in-line plastic packages (E suffix).
300ns
TEMPERATURE RANGE
o
MWS5114E1
0
C to +70
o
MWS5114D1
0
C to +70
MWS5114
(PDIP, SBDIP)
TOP VIEW
1
18
V
A6
DD
2
17
A7
A5
3
16
A8
A4
4
15
A9
A3
5
A0
14
I/O1
6
13
I/O2
A1
12
I/O3
7
A2
11
I/O4
8
CS
10
9
V
WE
SS
OPERATIONAL MODES
CS
WE
DATA PINS
0
1
Output: Dependent on data
0
0
Input
1
X
High Impedance
©
Intersil Corporation 1999
6-160
MWS5114
1024-Word x 4-Bit
LSI Static RAM
PACKAGE
PKG. NO.
o
C
PDIP
E18.3
Burn-In
E18.3
o
C
SBDIP
D18.3
Burn-In
D18.3
File Number
1325.2

MWS5114D3 Summary of contents