MMFT3055VL Motorola, MMFT3055VL Datasheet - Page 2

• Manufacturer Part Number: MMFT3055VL
• Description: TMOS POWER FET 1.5 AMPERES 60 VOLT
• Manufacturer: Motorola

(1) Pulse Test: Pulse Width 300 s, Duty Cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
MMFT3055VL
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
2
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS =
Gate Threshold Voltage
Static Drain–to–Source On–Resistance
Drain–to–Source On–Voltage
Forward Transconductance (V DS = 8.0 Vdc, I D = 1.5 Adc)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage (1)
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 C)
(V DS = V GS , I D = 250 Adc)
Threshold Temperature Coefficient (Negative)
(V GS = 5.0 Vdc, I D = 0.75 Adc)
(V GS = 5.0 Vdc, I D = 1.5 Adc)
(V GS = 5.0 Vdc, I D = 0.75 Adc, T J = 150 C)
(Measured from the drain lead 0.25 from package to center of die)
(Measured from the source lead 0.25 from package to source bond pad)
C pk =
Characteristic
Max limit – Typ
(I S = 1.5 Adc, V GS = 0 Vdc, T J = 150 C)
3 x SIGMA
15 Vdc, V DS = 0 Vdc)
(T J = 25 C unless otherwise noted)
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DD = 30 Vdc, I D = 1.5 Adc,
(V DD = 30 Vdc, I D = 1.5 Adc,
(V DS = 48 Vdc, I D = 1.5 Adc,
(V DS = 48 Vdc, I D = 1.5 Adc,
(V DS = 48 Vdc, I D = 1.5 Adc,
(I S = 1.5 Adc, V GS = 0 Vdc)
(I S = 1.5 Adc, V GS = 0 Vdc,
(I S = 1.5 Adc, V GS = 0 Vdc,
(I S = 1.5 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
V GS = 5.0 Vdc,
V GS = 5.0 Vdc,
V GS = 5.0 Vdc,
V GS = 5.0 Vdc)
V GS = 5.0 Vdc)
V GS = 5.0 Vdc)
2%.
f = 1.0 MHz)
f = 1.0 MHz)
f = 1.0 MHz)
R G = 9.1 )
R G = 9.1 )
R G = 9.1 )
G = 9.1 )
(Cpk
(Cpk
(Cpk
2.0) (3)
2.0) (3)
2.0) (3)
Motorola TMOS Power MOSFET Transistor Device Data
V (BR)DSS
R DS(on)
V DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
I DSS
I GSS
C oss
Q RR
C iss
C rss
V SD
g FS
Q T
Q 1
Q 2
Q 3
L D
L S
t rr
t a
t b
t r
t f
Min
1.0
1.0
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.125
0.066
0.82
0.68
Typ
350
110
1.5
3.7
3.5
9.5
9.0
1.0
4.0
3.5
4.5
7.5
65
29
18
35
22
41
29
12
—
—
—
—
—
—
Max
0.14
0.25
0.24
100
100
490
150
2.0
1.2
—
—
10
—
—
60
20
40
70
40
10
—
—
—
—
—
—
—
—
—
—
mV/ C
mV/ C
mhos
nAdc
Ohm
Unit
Vdc
Vdc
Vdc
Vdc
nC
nH
nH
Adc
pF
ns
ns
C