DS2016 Dallas Semiconducotr, DS2016 Datasheet - Page 5

• Manufacturer Part Number: DS2016
• Description: 2k x 8 3V/5V Operation Static RAM
• Manufacturer: Dallas Semiconducotr

AC CHARACTERISTICS WRITE CYCLE
DATA RETENTION CHARACTERISTICS
* Typical values are at 25°C
TIMING DIAGRAM: READ CYCLE
PARAMETER
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from
Output Active from
Data Setup Time
Data Hold Time
PARAMETER
Data Retention
Supply Voltage
Data Retention
Current at 3.5V
Data Retention
Current at 2.0V
Chip Deselect to
Data Retention
Recovery Time
SEE NOTE 1
WE
WE
SYMBOL
I
I
V
t
CCR1
CCR2
CDR
t
DR
R
SYMBOL
t
t
t
t
t
t
ODW
OEW
t
t
WC
AW
WR
WP
DH
DS
CE
CE
CE
CONDITIONS
5 of 9
V
V
V
MIN
(T
250
190
100
25
CC
CC
CC
0
5
0
A
- 0.3V
- 0.3V
- 0.3V
= -40°C to +85°C; V
TYP
MIN TYP
2.0
MAX
0
2
90
(T
50*
50*
A
= -40°C to +85°C)
CC
UNITS
MAX
= 2.7V to 3.5V)
1000
ns
ns
ns
ns
ns
ns
ns
ns
750
3.5
NOTES
UNITS
nA
nA
ms
µs
V
DS2016