HAT2077R Renesas Technology, HAT2077R Datasheet - Page 2

• Manufacturer Part Number: HAT2077R
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT2077R
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.2.00 Sep 07, 2005 page 2 of 6
2. When using the glass epoxy board (FR4 40
3. Pulse test
10 s, duty cycle
Item
Item
1%
V
Symbol
V
R
Coss
Crss
(BR) DSS
Ciss
t
t
Qgs
Qgd
I
GS (off)
I
DS (on)
|y
V
d (on)
d (off)
Qg
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Symbol
40
V
V
Tstg
Tch
I
DSS
GSS
I
DR
D
Note 2
Min
200
3.0
2.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Note 1
1.6 mm), PW
0.18
0.75
Typ
830
115
3.8
3.5
23
—
—
23
10
70
10
23
10
75
—
—
0.235
Max
1.15
10 s
4.5
—
—
—
—
—
—
—
0.1
—
—
—
—
—
—
–55 to +150
1
Value
200
150
2.5
24
30
3
3
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
A
I
V
V
I
I
I
V
V
f = 1 MHz
V
V
R
Rg = 10
V
V
I
I
I
di
D
D
D
D
D
F
F
GS
DS
DS
GS
DD
GS
L
DD
GS
F
= 3 A, V
= 3 A, V
= 10 mA, V
= 1 mA, V
= 1.5 A, V
= 1.5 A, V
= 3 A
/dt = 100 A/ s
= 66.7
= 30 V, V
= 200 V, V
= 25 V
= 0
= 10 V
= 160 V
= 10 V
Test Conditions
100 V, I
GS
GS
DS
GS
DS
= 0
= 0
GS
Unit
D
(Ta = 25 C)
(Ta = 25 C)
W
DS
GS
= 10 V
= 10 V
= 10 V
V
V
A
A
A
C
C
= 1.5 A
= 0
Note 3
= 0
= 0
Note 3
Note 3