BTS612N1E3230 Infineon Technologies AG, BTS612N1E3230 Datasheet

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BTS612N1E3230

Manufacturer Part Number
BTS612N1E3230
Description
Smart Two Channel Highside Power Switch
Manufacturer
Infineon Technologies AG
Datasheet

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Part Number:
BTS612N1E3230
Manufacturer:
ISSI
Quantity:
2 929
Smart Two Channel Highside Power Switch
Features
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
1
Semiconductor Group
)
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of V
Electrostatic discharge (ESD) protection
feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
C compatible power switch with diagnostic
With external current limit (e.g. resistor R
connection, reverse load current limited by connected load.
5
3
6
IN1
IN2
ST
PROFET
ESD
Voltage
Voltage
sensor
source
Logic
V
1 )
Logic
bb
protection
Overvoltage
protection
Level shifter
Charge
Charge
Level shifter
pump 1
pump 2
Rectifier 2
Rectifier 1
2
GND
Signal GND
GND
=150 ) in GND connection, resistor in series with ST
Current
Current
limit 1
limit 2
1 of 15
Product Summary
Overvoltage protection
Operating voltage
On-state resistance R
Load current (ISO)
Current limitation
Short to Vbb
Short to Vbb
Open load
unclamped
ind. loads 1
Open load
unclamped
ind. loads 2
detection 2
detection 1
Limit for
Limit for
Standard
protection
protection
Gate 2
Gate 1
1
Temperature
Temperature
sensor 1
sensor 2
7
channels:
TO-220AB/7
Straight leads
I
I
L(ISO)
L(SCr)
PROFET ® BTS612N1
ON
V
V
bb(AZ)
bb(on)
+ V bb
OUT1
OUT2
1
each
200
2.3
1
7
4
7
4
Load GND
5.0 ... 34 V
both
parallel
Load
2003-Oct-01
100 m
SMD
4.4
43
1
4
7
A
A
V

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BTS612N1E3230 Summary of contents

Page 1

Smart Two Channel Highside Power Switch Features Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection (including load dump) Fast demagnetization of inductive loads 1 ) Reverse battery protection Undervoltage and overvoltage shutdown with auto-restart and hysteresis Open ...

Page 2

Pin Symbol 1 OUT1 (Load GND 3 IN1 IN2 7 OUT2 (Load, L) Maximum Ratings °C unless otherwise specified j Parameter Supply voltage (overvoltage protection see page 4) ...

Page 3

Thermal Characteristics Parameter and Conditions Thermal resistance chip - case, both channels: junction - ambient (free air): SMD version, device on PCB Electrical Characteristics Parameter and Conditions ° unless otherwise specified j ...

Page 4

Parameter and Conditions ° unless otherwise specified j bb Operating Parameters ) 6 Operating voltage Undervoltage shutdown Undervoltage restart Undervoltage restart of charge pump see diagram page 12 Undervoltage hysteresis V = ...

Page 5

Parameter and Conditions ° unless otherwise specified Protection Functions Initial peak short circuit current limit (pin Repetitive short circuit shutdown current limit T = ...

Page 6

Parameter and Conditions ° unless otherwise specified j bb Input and Status Feedback Input resistance T =-40..150°C, see circuit page 7 j Input turn-on threshold voltage Input turn-off threshold voltage Input threshold ...

Page 7

Truth Table Normal operation Open load Short circuit Overtemperature Undervoltage/ Overvoltage L = "Low" Level X = don't care H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page ...

Page 8

Status output R ST(ON) GND ESD-Zener diode: 6.1 V typ., max 5 mA; R < 380 at 1.6 mA, ESD zener diodes are not ST(ON used as voltage clamp at DC conditions. Operation in this mode may result ...

Page 9

V disconnect with energized inductive bb load IN1 OUT1 high PROFET IN2 6 OUT2 ST GND Normal load current can be handled by the PROFET itself. V disconnect with charged external bb ...

Page 10

Typ. transient thermal impedance chip case Z = f(t ), one Channel active thJC p Z [K/W] thJC 10 1 0.1 0.01 1E-5 1E-4 1E-3 1E-2 Transient thermal impedance chip case Z = f(t ), both Channel active thJC p ...

Page 11

Timing diagrams Figure 1a: V turn on: bb IN1 IN2 OUT1 V OUT2 ST open drain Figure 2a: Switching a lamp OUT I L Semiconductor Group Both channels are symmetric and consequently the diagrams ...

Page 12

Heating up may require several milliseconds, depending on external conditions Figure 4a: Overtemperature: Reset if T < OUT T J Figure 5a: Open load: detection in OFF-state, turn on/off to open load IN1 IN2 channel ...

Page 13

Figure 7a: Overvoltage bb(over) ON(CL OUT ST Semiconductor Group V bb(o rst BTS612N1 2003-Oct-01 ...

Page 14

Package and Ordering Code All dimensions in mm Standard TO-220AB/7 BTS612N1 Q67060-S6303-A2 TO 220AB/7, Opt. E3230 BTS612N1 E3230 Semiconductor Group SMD TO 220AB/7, Opt. E3128 BTS612N1 E3128A T&R: Ordering code Changed since 04.96 Date Dec 1996 Ordering code Q67060-S6303-A3 14 ...

Page 15

... Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein ...

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