BTS775G Siemens Semiconductor, BTS775G Datasheet - Page 14

• Manufacturer Part Number: BTS775G
• Description: TrilithIC
• Manufacturer: Siemens Semiconductor

Electrical Characteristics (cont’d)
I
unless otherwise specified
Parameter
Thermal Shutdown
Thermal shutdown junction
temperature
Thermal switch-on junction
temperature
Temperature hysteresis
Output Stages
Leakage current
of highside switch
Leakage current of lowside
switch
Clamp-diode of highside
switch; forward-Voltage
Clamp-diode leakage-
current of highside switch
Clamp-diode of lowside
switch; forward-voltage
Static drain-source
on-resistance
of highside switch
Static drain-source
on-resistance of lowside
switch
Static path on-resistance
Note: The listed characteristics are ensured over the operating range of the integrated
Semiconductor Group
SH1
=
I
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at
the given supply voltage.
SH2
=
I
SL1
=
I
SL2
= 0 A; – 40 C <
Symbol
T
T
I
I
V
I
V
R
R
R
HLK
LKL
LKCL
jSD
jSO
T
FH
FL
DS ON H
DS ON L
DS ON
T
min.
155
150
–
–
–
–
–
–
–
–
–
j
< 150 C; 8 V >
Limit Values
14
typ.
–
–
10
5
1.3
0.8
2
0.8
85
45
–
max.
190
180
–
12
10
1.5
10
1.2
110
60
320
V
S
> 18 V
Unit Test Condition
V
mA
V
m
m
m
C
C
C
A
A
–
–
V
V
V
I
I
I
I
T
I
V
T
R
I
FH
FH
FL
SH
SL
SH
T
j
j
GH
GL
DS
GL
DS ON H
= 25 C
= 25 C
= 3 A
= 1 A;
= 3 A
= 3 A
= 1 A
= 1 A;
=
= 0 V
= 13 V
= 5 V
=
T
T
V
A
jSD
BTS 775 G
SH
+ R
= 25 C and
– T
1999-01-07
= 0 V
DS ON L
jSO