BTS775G Siemens Semiconductor, BTS775G Datasheet - Page 6

• Manufacturer Part Number: BTS775G
• Description: TrilithIC
• Manufacturer: Siemens Semiconductor

Circuit Description
Input Circuit
The control inputs GH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with
hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into
the necessary form for driving the power output stages.
The inputs GL1 and GL2 are connected to the internal gate-driving units of the fully
protected N-channel vertical power-MOS-FETs.
Output Stages
The output stages consist of an ultra low
protective circuits make the outputs short circuit proof to ground, to the supply voltage
and load short circuit proof. Positive and negative voltage spikes, which occur when
driving inductive loads, are limited by integrated power clamp diodes.
Short Circuit Protection
The outputs are protected against
– output short circuit to ground
– output short circuit to the supply voltage, and
– overload (load short circuit).
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-
Drop with an internal reference voltage. Above this trippoint the OP-Amp reduces the
output current depending on the junction temperature and the drop voltage.
In the case of overloaded high-side switches the status output is set to low.
If the HS-Switches are in OFF-state-Condition internal resistors
pull the voltage at SH1,2 to low values. On each output pin SH1 and SH2 an output
examiner circuit compares the output voltages with the internal reference voltage VEO.
This results in switching the status output to low. The fully protected low-side switches
have no status output.
Overtemperature Protection
The highside and the lowside switch also incorporates an overtemperature protection
circuit with hysteresis which switches off the output transistors and sets the status output
to low.
Undervoltage-Lockout (UVLO)
When
The High-Side output transistors are switched off if the supply voltage
the switch off value
Semiconductor Group
V
S
reaches the switch-on voltage
V
UVOFF
.
V
UVON
6
R
DS ON
the IC becomes active with a hysteresis.
Power-MOS H-Bridge. Embedded
R
O1,2
from SH1,2 to GND
V
S
BTS 775 G
drops below
1999-01-07