RJK2061JPE Renesas, RJK2061JPE Datasheet - Page 2

• Manufacturer Part Number: RJK2061JPE
• Description: N-Channel Power MOSFET
• Manufacturer: Renesas

RJK2061JPE
Electrical Characteristics
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
R07DS0369EJ0100 Rev.1.00
May 12, 2011
5. Pulse test
Item
Symbol
V
R
Coss
Crss
Ciss
Qgs
Qgd
t
t
I
I
GS(off)
DS(on)
V
Qg
d(on)
d(off)
GSS
DSS
t
t
t
rr
DF
r
f
Min
2.5
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www.DataSheet.co.kr
2100
Typ
385
155
9.5
3.5
0.9
55
65
32
17
45
—
—
—
4
5
Max
1.17
±10
3.5
10
75
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Unit
mΩ
μA
μA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
I
I
V
V
f = 1 MHz
V
I
I
V
I
I
di
D
D
D
D
F
F
GS
DS
DS
GS
DD
GS
= 20 A, R
F
= 40 A, V
= 40 A, V
= 1 mA, V
= 20 A, V
= 40 A
/dt = 100 A/μs
= 200 V, V
= 10 V,
= ±20 V, V
= 0
= 25 V, V
= 10 V, R
Test Conditions
L
GS
GS
GS
DS
= 1.5 Ω
GS
G
= 10 V
Preliminary
= 0
= 0,
DS
GS
= 10 V
(Ta = 25°C)
= 4.7 Ω
Page 2 of 6
= 10 V
= 0
= 0
Note
5
Note
5
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