RJK2061JPE Renesas, RJK2061JPE Datasheet - Page 3

• Manufacturer Part Number: RJK2061JPE
• Description: N-Channel Power MOSFET
• Manufacturer: Renesas

RJK2061JPE
Main Characteristics
R07DS0369EJ0100 Rev.1.00
May 12, 2011
Static Drain to Source On State Resistance vs.
100
150
100
250
200
150
100
250
200
50
50
80
60
40
20
0
0
0
0
Gate to Source Voltage V
Drain to Source Voltage V
Tc = 25 C
Pulse Test
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
Gate to Source Voltage
2
4
50
6 V
8
4
8 V
100
10 V
12
6
Tc (°C)
V
I
Pulse Test
Tc = 175 C
150
D
GS
= 20 A
GS
16
8
DS
= 4.0 V
40 C
25 C
4.3 V
4.6 V
(V)
(V)
5 V
200
10
20
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0.001
1000
1000
0.01
0.01
100
100
100
Static Drain to Source On State Resistance
0.1
0.1
10
10
10
1
1
0.1
1
1
Tc = 25 C
1 shot Pulse
Gate to Source Voltage V
V
Operation
in this area
is limited R
V
Pulse Test
Drain to Source Voltage
Typical Transfer Characteristics
Tc = 175 C
GS
DS
Maximum Safe Operation Area
= 10 V
= 10 V
2
Drain Current I
1
vs. Drain Current
DS(on)
3
DC Operation
10
10
4
40 C
25 C
D
Tc = 25 C
Pulse Test
100
(A)
V
GS
DS
5
Preliminary
(V)
(V)
Page 3 of 6
1000
100
6
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