RJK2061JPE Renesas, RJK2061JPE Datasheet - Page 4

• Manufacturer Part Number: RJK2061JPE
• Description: N-Channel Power MOSFET
• Manufacturer: Renesas

RJK2061JPE
R07DS0369EJ0100 Rev.1.00
May 12, 2011
250
200
150
100
100
Static Drain to Source On State Resistance
25
20
15
10
80
60
40
20
50
5
0
0
0
50
25
V
Tc = 25 C
I
Pulse Test
I
Channel Temperature Tch ( C)
D
D
DS
Channel Temperature Derating
Dynamic Input Characteristics
= 30 A
= 30 A
Case Temperature Tc ( C)
50
10
Gate Charge Qg (nC)
0
Avalanche Energy vs.
vs. Temperature
75
V
50
V
20
V
DD
DD
GS
100
= 50 V
= 50 V
= 10 V
25 V
10 V
25 V
10 V
100
30
125
I
V
duty < 0.1 %
Rg
AP
DD
= 15 A
= 50 V
150
50
40
150
V
GS
200
50
175
20
16
12
8
4
0
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10000
1000
100
10
50
40
30
20
10
0
0
Drain to Source Voltage V
Source to Drain Voltage V
Tc = 25 C
V
f = 1 MHz
GS
Reverse Drain Current vs.
5
10 V
= 0
Drain to Source Voltage
Typical Capacitance vs.
Source to Drain Voltage
0.4
10
0.8
V
15
GS
= 0, 5 V
1.2
20
Tc = 25 C
Pulse Test
1.6
DS
SD
25
Preliminary
Coss
Crss
Ciss
Page 4 of 6
(V)
(V)
30
2.0
Datasheet pdf - http://www.DataSheet4U.net/