IPB039N10N3G Infineon Technologies AG, IPB039N10N3G Datasheet

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IPB039N10N3G

Manufacturer Part Number

IPB039N10N3G

Description

OptiMOS3 Power-Transistor

Manufacturer

Infineon Technologies AG

Datasheet

1.IPB039N10N3G.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IPB039N10N3G

Manufacturer:

INFINEON

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IPB039N10N3G

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IPB039N10N3G

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Rev.2.03

1)

2)

OptiMOS

Features

• N-channel, normal level

• Excellent gate charge x R

• Very low on-resistance R

• High current capability

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Type

Package

Marking

J-STD20 and JESD22

See figure 3

™

3 Power-Transistor

IPB039N10N3 G

PG-TO263-7

039N10N

2)

j

=25 °C, unless otherwise specified

DS(on)

DS(on)

1)

product (FOM)

for target application

Symbol Conditions

I

I

E

V

P

T

D

D,pulse

j

AS

GS

tot

, T

stg

T

T

T

I

T

D

page 1

C

C

C

C

=100 A, R

=25 °C

=100 °C

=25 °C

=25 °C

2)

GS

=25 Ω

Product Summary

V

R

I

D

DS

DS(on),max

-55 ... 175

55/175/56

Value

160

113

640

340

±20

214

IPB039N10N3 G

100

160

3.9

Unit

A

mJ

V

W

°C

V

mΩ

A

2009-12-17

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