RJP30E2DPK-M0 Renesas, RJP30E2DPK-M0 Datasheet - Page 2

• Manufacturer Part Number: RJP30E2DPK-M0
• Description: N-Channel Power MOSFET
• Manufacturer: Renesas

RJP30E2DPK-M0
Electrical Characteristics
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Notes: 3. Pulse test.
R07DS0348EJ0100 Rev.1.00
Apr 12, 2011
Item
Symbol
V
V
Coes
Cres
Cies
Qge
t
t
Qgc
I
I
CE(sat)
GE(off)
Qg
d(on)
d(off)
CES
GES
t
t
r
f
Min
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
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1160
0.03
0.08
0.15
Typ
1.7
0.1
60
26
34
10
—
—
—
6
±100
Max
2.2
—
—
—
—
—
—
—
—
—
—
1
5
Unit
μA
nA
pF
pF
pF
nC
nC
nC
μs
μs
μs
μs
V
V
V
V
V
I
V
V
f = 1 MHz
V
V
I
I
R
V
R
C
C
C
CE
GE
CE
CE
GE
GE
CE
GE
L
G
= 35 A, V
= 35 A
= 35 A
= 4.5 Ω
= 5 Ω
= 150 V
= 15 V
= 360 V, V
= ± 30 V, V
= 10 V, I
= 25 V
= 0
= 15 V
Test Conditions
GE
C
= 1 mA
= 15 V
Preliminary
GE
CE
(Ta = 25°C)
Page 2 of 6
= 0
= 0
Note3
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