RJP30E2DPK-M0 Renesas, RJP30E2DPK-M0 Datasheet - Page 3

• Manufacturer Part Number: RJP30E2DPK-M0
• Description: N-Channel Power MOSFET
• Manufacturer: Renesas

RJP30E2DPK-M0
Main Characteristics
R07DS0348EJ0100 Rev.1.00
Apr 12, 2011
1000
0.01
100
200
160
120
0.1
10
80
40
10
0
1
8
6
4
2
0
0
0.1
Collector to Emitter Saturation Voltage
Collector to Emitter Voltage V
0
0
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Voltage V
Pulse Test
Ta = 25
Ta = 25
1 shot pulse
Typical Output Characteristics (2)
Gate to Emitter Voltage V
Maximum Safe Operation Area
15 V
12 V
10 V
2
4
9.5 V
°
°
C
1
C
I
C
= 35 A
4
8
10
75 A
12
6
105 A
Pulse Test
Ta = 25
100
9 V
16
8
GE
CE
8.5 V
8 V
7.5 V
7 V
6.5 V
6 V
5.5 V
CE
°
(V)
C
(V)
1000
(V)
10
20
www.DataSheet.co.kr
100
100
0.1
10
80
60
40
20
80
60
40
20
0
1
0
Collector to Emitter Saturation Voltage
1
0
Collector to Emitter Voltage V
0
Pulse Test
Ta = 25
25°C
Typical Output Characteristics (1)
Typical Transfer Characteristics
V
Pulse Test
V
Pulse Test
Gate to Emitter Voltage V
vs. Collector Current (Typical)
CE
GE
Tc = –25°C
75°C
25°C
= 10 V
= 15 V
Collector Current I
1
2
75°C
10 V
15 V
°
C
8 V
7.5 V
4
2
7 V
10
6
3
Tc = –25°C
C
(A)
8
4
GE
Preliminary
CE
6.5 V
6 V
5.5 V
5 V
Page 3 of 6
(V)
(V)
100
10
5
Datasheet pdf - http://www.DataSheet4U.net/